Field Effect in Semiconductor-Electrolyte Interfaces: Application to Investigations of Electronic Properties of Semiconductor Surfaces, Adil M. Yafyasov, Pavel P. Konorov, Vladislav B. Bogevolnov
Описание: Organic-inorganic Membranes Impregnated with Ionic Liquid.- Organic/TiO2 Nanocomposite Membranes: Recent Developments.- Organic/Silica Nanocomposite Membranes.- Organic/Zeolites Nanocomposite Membranes.- Composite Membranes Based on Heteropolyacids and Their Applications in Fuel Cells.- Organic/Montmorillonite Nanocomposite Membranes.- Electrospun Nanocomposite Materials for Polymer Electrolyte Membrane Methanol Fuel Cells.- A Basic Overview of Fuel Cells: Thermodynamics and Cell Efficiency.- Organic/Zirconia and Sulfated Zirconia Nanocomposite Membranes for Proton Exchange Membrane Fuel Cells.- Electrochemical Promotional Role of Under-rib Convection based Flow-field in Polymer Electrolyte Membrane Fuel Cells.- Methods for the Preparation of Organic-inorganic Nanocomposite Polymer Electrolyte Membranes for Fuel Cells.- An Overview of Chemical and Mechanical Stabilities of Polymer Electrolytes Membrane.- Electrospun Nanocomposite Materials for Polymer Electrolyte Membrane Fuel Cells.- Fabrication Techniques for the Polymer Electrolyte Membranes for Fuel Cells.- Chitosan Based Polymer Electrolyte Membranes for Fuel Cell Applications.- Fuel Cells: Construction, Design and Materials.- Proton Conducting Polymer Electrolytes for Fuel Cells via Electrospinning Technique
Описание: This is a specialized book for researchers and technicians of universities and companies who are interested in the fundamentals of RF power semiconductors, their applications and market penetration.Looking around, we see that products using vacuum tube technology are disappearing.
Автор: Winfried M?nch Название: Semiconductor Surfaces and Interfaces ISBN: 3642087485 ISBN-13(EAN): 9783642087486 Издательство: Springer Рейтинг: Цена: 32651.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.
Описание: As we know, the accumulation-type space charge region is highly conductive, which is an important property for highly efficient charge generation in their application as charge injector and charge generation layer in OLEDs.
Описание: The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures.
Автор: Winfried M?nch Название: Electronic Properties of Semiconductor Interfaces ISBN: 3642057780 ISBN-13(EAN): 9783642057786 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Monch explains the band-structure lineup at all types of semiconductor interfaces.
Описание: The instability of these properties and their uncon- trollable alterations with temperature and under the influence of environmental conditions result in a lack of stability in the performance of semiconductor devices, hence the high percentage of waste in their industrial production.
Автор: G.J. Davies; R.H. Williams Название: Semiconductor Growth, Surfaces and Interfaces ISBN: 0412577305 ISBN-13(EAN): 9780412577307 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Bring together several diverse but related topics concerned with semiconductor growth. This text is suitable for those studying semiconductor growth from any perspective, and also those in the semiconductor industry, whether in applications or in manufacturing.
Автор: Cristiano Calligaro; Umberto Gatti; Название: Rad-hard Semiconductor Memories ISBN: 8770220204 ISBN-13(EAN): 9788770220200 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects).After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components.Technical topics discussed in the book include:Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Автор: G. Landwehr Название: Application of High Magnetic Fields in Semiconductor Physics ISBN: 3540119965 ISBN-13(EAN): 9783540119968 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This is a specialized book for researchers and technicians of universities and companies who are interested in the fundamentals of RF power semiconductors, their applications and market penetration.Looking around, we see that products using vacuum tube technology are disappearing.
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