Автор: Sitek, Arkadiusz Название: Silicon, Germanium, and Their Alloys ISBN: 0367783657 ISBN-13(EAN): 9780367783655 Издательство: Taylor&Francis Рейтинг: Цена: 7501.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This authoritative reference book covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. Its chapters span bulk, thin film, and nanostructured materials growt
Автор: Kumar, Vijay Название: Metal Oxide Defects ISBN: 0323855881 ISBN-13(EAN): 9780323855884 Издательство: Elsevier Science Рейтинг: Цена: 33686.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Gott Название: Defects in Self-Catalysed III-V Nanowires ISBN: 3030940640 ISBN-13(EAN): 9783030940645 Издательство: Springer Рейтинг: Цена: 22359.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
Автор: Kumar Parmod, Singh Jitendra Pal, Kumar Vinod Название: Ion Beam Induced Defects and Their Effects in Oxide Materials ISBN: 3030938611 ISBN-13(EAN): 9783030938611 Издательство: Springer Рейтинг: Цена: 6288.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an overview of the applications of ion beam techniques in oxide materials. Oxide materials exhibit defect-induced physical properties relevant to applications in sensing, optoelectronics and spintronics. Defects in these oxide materials also lead to magnetism in non-magnetic materials or to a change of magnetic ordering in magnetic materials. Thus, an understanding of defects is of immense importance. To date, ion beam tools are considered the most effective techniques for producing controlled defects in these oxides. This book will detail the ion beam tools utilized for creating defects in oxides.
Автор: Gott James A. Название: Defects in Self-Catalysed III-V Nanowires ISBN: 3030940616 ISBN-13(EAN): 9783030940614 Издательство: Springer Рейтинг: Цена: 22359.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
Автор: Pizzini, Sergio Название: Defects in Nanocrystals ISBN: 0367489074 ISBN-13(EAN): 9780367489076 Издательство: Taylor&Francis Рейтинг: Цена: 10104.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses small semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic level. It considers individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are covered in detail.
Автор: Pizzini, Sergio Название: Defects in Nanocrystals ISBN: 0367345994 ISBN-13(EAN): 9780367345990 Издательство: Taylor&Francis Рейтинг: Цена: 25265.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses small semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic level. It considers individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are covered in detail.
Описание: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap.
Автор: Tatyana Volk; Manfred W?hlecke Название: Lithium Niobate ISBN: 3642089666 ISBN-13(EAN): 9783642089664 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers new research on LiNbO3 including current studies on intrinsic and extrinsic point defects and the contribution of intrinsic defects to photoinduced charge transport. Applications of this material are also discussed.
Автор: David A. Drabold; Stefan Estreicher Название: Theory of Defects in Semiconductors ISBN: 3642070035 ISBN-13(EAN): 9783642070037 Издательство: Springer Рейтинг: Цена: 33401.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research.
Автор: Victor Gloumov; Victor A. Perevostchikov; Vladimir Название: Gettering Defects in Semiconductors ISBN: 3642065708 ISBN-13(EAN): 9783642065705 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
