Описание: This up-to-date reference is the most comprehensive summary of the field of nanoscience and its applications. It begins with fundamental properties at the nanoscale and then goes well beyond into the practical aspects of the design, synthesis, and use of nanomaterials in various industries.
Автор: Nath Название: Nanoelectronics, Circuits and Communication Systems ISBN: 981157488X ISBN-13(EAN): 9789811574887 Издательство: Springer Рейтинг: Цена: 41925.00 р. Наличие на складе: Поставка под заказ.
Описание: This book features selected papers presented at the Fifth International Conference on Nanoelectronics, Circuits and Communication Systems (NCCS 2019). It covers a range of topics, including nanoelectronic devices, microelectronics devices, material science, machine learning, Internet of things, cloud computing, computing systems, wireless communication systems, advances in communication 5G and beyond. Further, it discusses VLSI circuits and systems, MEMS, IC design and testing, electronic system design and manufacturing, speech signal processing, digital signal processing, FPGA-based wireless communication systems and FPGA-based system design, Industry 4.0, e-farming, semiconductor memories, and IC fault detection and correction.
Автор: Mircea Dragoman; Daniela Dragoman Название: 2D Nanoelectronics ISBN: 3319484354 ISBN-13(EAN): 9783319484358 Издательство: Springer Рейтинг: Цена: 15372.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed.Both authors are working currently on these 2D materials developing theory and applications.
Описание: 'The author has made this book accessible to many readers interested in learning about the fascinating world of nanotechnology by limiting the necessary background for understanding the book ... The book takes a very complex subject and makes very clear explanations, with many illustrations, that will give the reader an opportunity to understand these, oftentimes, counterintuitive concepts. Understanding these concepts allows one to more fully appreciate the sophistication of many of today (TM)s electronic devices.'IEEE Electrical Insulation MagazineEveryone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat dissipation on an atomic scale which is of broad relevance to the general problems of non-equilibrium statistical mechanics that pervade many different fields.This book is based on a set of two online courses originally offered in 2012 on nanoHUB-U and more recently in 2015 on edX. In preparing the second edition the author decided to split it into parts A and B titled Basic Concepts and Quantum Transport respectively, along the lines of the two courses. A list of available video lectures corresponding to different sections of this volume is provided upfront.To make these lectures accessible to anyone in any branch of science or engineering, the author assume very little background beyond linear algebra and differential equations. However, the author will be discussing advanced concepts that should be of interest even to specialists, who are encouraged to look at his earlier books for additional technical details.
Автор: Kaushik, Brajesh Kumar Название: Nanoelectronics ISBN: 0128133538 ISBN-13(EAN): 9780128133538 Издательство: Elsevier Science Рейтинг: Цена: 23244.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. . In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used.
Автор: Guo Qi Zhang; Alfred van Roosmalen Название: More than Moore ISBN: 1489984313 ISBN-13(EAN): 9781489984319 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In the past decades, the mainstream of microelectronics progression was mainly powered by Moore`s law focusing on IC miniaturization down to nano scale. However, there is a fast increasing need for "More than Moore" (MtM) products and technology that are based upon or derived from silicon technologies, but do not simply scale with Moore`s law.
Автор: Lundstrom Mark Et Al Название: Near-Equilibrium Transport: Fundamentals And Applications ISBN: 9814327786 ISBN-13(EAN): 9789814327787 Издательство: World Scientific Publishing Рейтинг: Цена: 8870.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Includes lectures that are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, bottom up approach that agrees with traditional methods when devices are large, but which also works for nano-devices.
Автор: Sattler, Klaus D. Название: 21st Century Nanoscience – A Handbook ISBN: 1032335890 ISBN-13(EAN): 9781032335896 Издательство: Taylor&Francis Рейтинг: Цена: 7348.00 р. Наличие на складе: Поставка под заказ.
Автор: Arora, Vijay Kumar Название: Nanoelectronics ISBN: 0367575922 ISBN-13(EAN): 9780367575922 Издательство: Taylor&Francis Рейтинг: Цена: 7501.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Joseph, Jacquleen (Tata Institute of Social Sciences, India) Awasthi, Suchita (Tata Institute of Social Sciences, India) Mulla, Zubin R. (Tata Institute of Social Sciences, India) Название: Nanoelectronics for Next-Generation Integrated Circuits ISBN: 0367726521 ISBN-13(EAN): 9780367726522 Издательство: Taylor&Francis Рейтинг: Цена: 19906.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume addresses the current state-of-the art in nanoelectronic technologies and presents potential options for next-generation ICs. It will be useful reference guide for researchers, engineers, and advanced students working in the frontier areas of design and modeling of nanoelectronic devices.
Описание: The book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2021). The volume includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and will be immensely useful to academic researchers and practitioners in the industry who work in this field.
Описание: The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.
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