Автор: Suh Song, Young Название: Negative Capacitance Field Effect Transistors ISBN: 1032445319 ISBN-13(EAN): 9781032445311 Издательство: Taylor&Francis Рейтинг: Цена: 15312.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Samuel, T. S. Arun Название: Tunneling Field Effect Transistors ISBN: 1032348763 ISBN-13(EAN): 9781032348766 Издательство: Taylor&Francis Рейтинг: Цена: 20671.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Mark Lundstrom; Jing Guo Название: Nanoscale Transistors ISBN: 1441939156 ISBN-13(EAN): 9781441939159 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.
Автор: Tarek Zaki Название: Short-Channel Organic Thin-Film Transistors ISBN: 331918895X ISBN-13(EAN): 9783319188959 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned.
Описание: The book summarizes Ting Lei`s PhD study on a series of novel conjugated polymers for field-effect transistors (FETs). Studies contain many aspects of polymer FETs, including backbone design, side-chain engineering, property study, conformation effects and device fabrication.
Название: Carbon-Based Electronics ISBN: 981461310X ISBN-13(EAN): 9789814613101 Издательство: Taylor&Francis Рейтинг: Цена: 11636.00 р. Наличие на складе: Нет в наличии.
Автор: Bindal Ahmet, Hamedi-Hagh Sotoudeh Название: Silicon Nanowire Transistors ISBN: 331980085X ISBN-13(EAN): 9783319800851 Издательство: Springer Рейтинг: Цена: 11179.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology`s true potential for the next generation VLSI.
Автор: S.D. Brotherton Название: Introduction to Thin Film Transistors ISBN: 3319033107 ISBN-13(EAN): 9783319033105 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book surveys the technology and applications of TFTs, covering hydrogenated amorphous silicon, poly-crystalline silicon, transparent amorphous oxide semiconductors, organic semiconductors and others that form the core of the flat panel display industry.
A comprehensive one-volume reference on current JLFET methods, techniques, and research
Advancements in transistor technology have driven the modern smart-device revolution--many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs
This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource:
Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET
Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation
Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs
Suggests research directions and potential applications of JLFETs
Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
Название: High-k gate dielectric materials ISBN: 1774638851 ISBN-13(EAN): 9781774638859 Издательство: Taylor&Francis Рейтинг: Цена: 12707.00 р. Наличие на складе: Нет в наличии.
Описание: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS).
Описание: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
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