Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Автор: Rossi Название: Theory of Semiconductor Quantum Devices ISBN: 3642105556 ISBN-13(EAN): 9783642105555 Издательство: Springer Рейтинг: Цена: 19532 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectronic nanodevices, including quantum-cascade laser sources and detectors, few-electron/exciton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.
Автор: Kasap Название: Electronic materials and devices ISBN: 0071244581 ISBN-13(EAN): 9780071244589 Издательство: McGraw-Hill Рейтинг: Цена: 5313 р. Наличие на складе: Невозможна поставка.
Описание: "Principles of Electronic Materials and Devices, Third Edition", is a greatly enhanced version of the highly successful text "Principles of Electronic Materials and Devices, Second Edition". It is designed for a first course on electronic materials given in Materials Science and Engineering, Electrical Engineering, and Physics and Engineering Physics Departments at the undergraduate level.
Автор: MГ¶nch Winfried Название: Electronic Properties of Semiconductor Interfaces ISBN: 3540202153 ISBN-13(EAN): 9783540202158 Издательство: Springer Рейтинг: Цена: 19532 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as a unifying theme, MГ¶nch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Описание: A graduate textbook presenting the underlying physics behind devices that drive today’s technologies. The book covers important details of structural properties, bandstructure, transport, optical and magnetic properties of semiconductor structures. Effects of low-dimensional physics and strain - two important driving forces in modern device technology - are also discussed. In addition to conventional semiconductor physics the book discusses self-assembled structures, mesoscopic structures and the developing field of spintronics. The book utilizes carefully chosen solved examples to convey important concepts and has over 250 figures and 200 homework exercises. Real-world applications are highlighted throughout the book, stressing the links between physical principles and actual devices. Electronic and Optoelectronic Properties of Semiconductor Structures provides engineering and physics students and practitioners with complete and coherent coverage of key modern semiconductor concepts. A solutions manual and set of viewgraphs for use in lectures are available for instructors, from solutions@cambridge.org.
Автор: Kwok K. Ng Название: Complete Guide to Semiconductor Devices, 2nd Edition ISBN: 0471202401 ISBN-13(EAN): 9780471202400 Издательство: Wiley Рейтинг: Цена: 19173 р. Наличие на складе: Поставка под заказ.
Описание: Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry. This book gives a collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. It is intended for students, researchers, lawyers, and others.
Автор: Kevin F. Brennan Название: Introduction to Semiconductor Devices ISBN: 0521831504 ISBN-13(EAN): 9780521831505 Издательство: Cambridge Academ Рейтинг: Цена: 14725 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: From semiconductor fundamentals to state-of-the-art semiconductor devices used in the telecommunications and computing industries, this book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering today. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. The book begins with a discussion of the fundamental properties of semiconductors. Next, state-of-the-art field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturization are then addressed. The rest of the book discusses the structure, behavior, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
Автор: Neamen Название: Semiconductor Physics And Devices ISBN: 0071198628 ISBN-13(EAN): 9780071198622 Издательство: McGraw-Hill Цена: 3325 р. Наличие на складе: Поставка под заказ.
Описание: "Neamen's Semiconductor Physics and Devices, Third Edition" deals with the electrical properties and characteristics of semiconductor materials and devices.
The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and
understandable way.
Автор: H. Fukuda Название: Rapid Thermal Processing for Future Semiconductor Devices, ISBN: 0444513396 ISBN-13(EAN): 9780444513397 Издательство: Elsevier Science Рейтинг: Цена: 12331 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. It covers the following areas such as advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe and hetero-structure.
Автор: Bonani Fabrizio, Ghione Giovanni Название: Noise in Semiconductor Devices / Modeling and Simulation ISBN: 3540665838 ISBN-13(EAN): 9783540665830 Издательство: Springer Рейтинг: Цена: 16602 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.
Описание: In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
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