Compact MOSFET Models for VLSI Design, BHATTACHARYYA

Автор: Miura-Mattausch Mitiko Et Al
Название: Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim
ISBN: 9813203315 ISBN-13(EAN): 9789813203310
Издательство: World Scientific Publishing
Цена: 9504.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание:

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Автор: Arora Narain
Название: Mosfet Modeling For Vlsi Simulation: Theory And Practice
ISBN: 9813203307 ISBN-13(EAN): 9789813203303
Издательство: World Scientific Publishing
Цена: 9504.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание:

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.