Mosfet Modeling For Vlsi Simulation: Theory And Practice, Arora Narain

Автор: BHATTACHARYYA
Название: Compact MOSFET Models for VLSI Design
ISBN: 0470823429 ISBN-13(EAN): 9780470823422
Издательство: Wiley
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Цена: 16624.00 р.
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Описание: Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies.

Автор: Miura-Mattausch Mitiko Et Al
Название: Physics And Modeling Of Mosfets, The: Surface-Potential Model Hisim
ISBN: 9813203315 ISBN-13(EAN): 9789813203310
Издательство: World Scientific Publishing
Цена: 9504.00 р.
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Описание:

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.

Автор: John P. Uyemura
Название: Introduction to VLSI Circuits and Systems
ISBN: 0471127043 ISBN-13(EAN): 9780471127048
Издательство: Wiley
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Цена: 34846.00 р.
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Описание: Presents modern CMOS logic circuits, fabrication, and layout in a cohesive manner that links the material together with the system-level considerations. Chapter on Verilog HDL allows for rapid start-up. Illustrates the top-down design procedure used in modern VLSI chip design with an emphasis on variations in the HDL, logic, circuits and layout.