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Wide band gap semiconductor nanowires 2, Consonni Vincent


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Автор: Consonni Vincent   (Винсент Консонни)
Название:  Wide band gap semiconductor nanowires 2
Перевод названия: Винсент Консонни: Широкополосные полупроводниковые нанопроволоки для оптических приборов
ISBN: 9781848216877
Издательство: Wiley
Классификация:
ISBN-10: 1848216874
Обложка/Формат: Hardback
Страницы: 368
Вес: 0.56 кг.
Дата издания: 29.07.2014
Серия: Engineering
Язык: English
Иллюстрации: Black & white illustrations, figures
Размер: 243 x 164 x 26
Читательская аудитория: Professional & vocational
Ключевые слова: Electronics & communications engineering
Подзаголовок: Heterostructures and optoelectronic devices
Ссылка на Издательство: Link
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Поставляется из: Англии
Описание:

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.

Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.




Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication

Автор: Schmeckebier
Название: Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication
ISBN: 3319442740 ISBN-13(EAN): 9783319442747
Издательство: Springer
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Цена: 16769.00 р.
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Описание:

This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics.
In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks.
Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007

Автор: Grasser Tibor, Selberherr Siegfried
Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
Издательство: Springer
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Цена: 25853.00 р.
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Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.

Nanowires

Автор: Zhang
Название: Nanowires
ISBN: 331941979X ISBN-13(EAN): 9783319419794
Издательство: Springer
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Цена: 16979.00 р.
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Описание: This book provides a comprehensive summary of nanowire research in the past decade, from the nanowire synthesis, characterization, assembly, to the device applications. In particular, the developments of complex/modulated nanowire structures, the assembly of hierarchical nanowire arrays, and the applications in the fields of nanoelectronics, nanophotonics, quantum devices, nano-enabled energy, and nano-bio interfaces, are focused. Moreover, novel nanowire building blocks for the future/emerging nanoscience and nanotechnology are also discussed.

Semiconducting nanowires represent one of the most interesting research directions in nanoscience and nanotechnology, with capabilities of realizing structural and functional complexity through rational design and synthesis. The exquisite control of chemical composition, morphology, structure, doping and assembly, as well as incorporation with other materials, offer a variety of nanoscale building blocks with unique properties.

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