Описание: The definition of "photonics" has been broadened in recent years to include nonlinear and quantum optics, today usually based on laser light. This book covers the fundamental properties of photon and light beams, both experimentally and theoretically. It covers the essentials of linear interactions and most of the nonlinear interactions between light and matter in both the transparent and absorbing cases. It also provides a basic knowledge of modern lasers, as well as the principles of nonlinear optical spectroscopy. It is self-consistent and enriched by a large number of calculated illustrations, examples, and descriptive tables. Graduate students in physics and electrical engineering, as well as other sciences, will find this book a thorough introduction to the field, while for lecturers and scientists it offers a rich source of useful information and a ready-to-hand reference. About 4000 references open access to original literature.The second edition is completely revised and enlarged.
Автор: Feng Zhe Chuan Название: Iii-Nitride Materials, Devices And Nano-Structures ISBN: 1786343185 ISBN-13(EAN): 9781786343185 Издательство: World Scientific Publishing Рейтинг: Цена: 21384.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.
The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources". Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.
Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Описание: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currely the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Автор: Tae-Yeon Seong; Jung Han; Hiroshi Amano; Hadis Mor Название: III-Nitride Based Light Emitting Diodes and Applications ISBN: 9400758626 ISBN-13(EAN): 9789400758629 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses LED production issues, including needed improvement in growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, materials quality, efficiency droop, growth in different orientations and polarization.
Автор: Mi, Zetian Название: III-Nitride Semiconductor Optoelectronics,96 ISBN: 0128095849 ISBN-13(EAN): 9780128095843 Издательство: Elsevier Science Рейтинг: Цена: 30149.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.
Contains the latest breakthrough research in III-nitride optoelectronics
Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices
Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Описание: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations. Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting. Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.
