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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion, Meneghesso


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Цена: 13974.00р.
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Автор: Meneghesso
Название:  Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
ISBN: 9783319779935
Издательство: Springer
Классификация:


ISBN-10: 3319779931
Обложка/Формат: Hardcover
Страницы: 232
Вес: 0.54 кг.
Дата издания: 2018
Серия: Integrated Circuits and Systems
Язык: English
Издание: 1st ed. 2018
Иллюстрации: 168 tables, color; 165 illustrations, color; 18 illustrations, black and white; xiii, 232 p. 183 illus., 165 illus. in color.
Размер: 234 x 156 x 16
Читательская аудитория: Professional & vocational
Основная тема: Circuits and Systems
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание:

Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.




Advanced Simulation  Methods For Gallium Nitride Electronic Devices: An accurate analysis of  state-of-the-art high-frequency and high-power Gallium Nitride High   Electron Mobility Transistors

Автор: Fabio Alessio Marino
Название: Advanced Simulation Methods For Gallium Nitride Electronic Devices: An accurate analysis of state-of-the-art high-frequency and high-power Gallium Nitride High Electron Mobility Transistors
ISBN: 363931929X ISBN-13(EAN): 9783639319293
Издательство: LAP LAMBERT Academic Publishing
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Цена: 4575.00 р.
Наличие на складе: Нет в наличии.

Gallium Nitride And Silicon Carbide Power Devices

Автор: Baliga B Jayant
Название: Gallium Nitride And Silicon Carbide Power Devices
ISBN: 9813109408 ISBN-13(EAN): 9789813109407
Издательство: World Scientific Publishing
Рейтинг:
Цена: 16790.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание:

"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."

IEEE Electrical Insulation Magazine

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.

This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

Technology of Gallium Nitride Crystal Growth

Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski
Название: Technology of Gallium Nitride Crystal Growth
ISBN: 3642263895 ISBN-13(EAN): 9783642263897
Издательство: Springer
Рейтинг:
Цена: 23508.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Gallium Nitride Processing for Electronics, Sensors and Spintronics

Автор: Stephen J. Pearton; Cammy R. Abernathy; Fan Ren
Название: Gallium Nitride Processing for Electronics, Sensors and Spintronics
ISBN: 1849969655 ISBN-13(EAN): 9781849969659
Издательство: Springer
Рейтинг:
Цена: 26120.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание:

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the world's leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Technology of Gallium Nitride Crystal Growth

Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski
Название: Technology of Gallium Nitride Crystal Growth
ISBN: 3642048285 ISBN-13(EAN): 9783642048289
Издательство: Springer
Рейтинг:
Цена: 23508.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Gallium Nitride Electronics

Автор: R?diger Quay
Название: Gallium Nitride Electronics
ISBN: 3642090982 ISBN-13(EAN): 9783642090981
Издательство: Springer
Рейтинг:
Цена: 28732.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics;


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