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Technology of Gallium Nitride Crystal Growth, Dirk Ehrentraut; Elke Meissner; Michal Bockowski


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Цена: 23508.00р.
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При оформлении заказа до: 2025-07-28
Ориентировочная дата поставки: Август-начало Сентября
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Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski
Название:  Technology of Gallium Nitride Crystal Growth
ISBN: 9783642263897
Издательство: Springer
Классификация:


ISBN-10: 3642263895
Обложка/Формат: Paperback
Страницы: 348
Вес: 0.53 кг.
Дата издания: 2010
Серия: Springer Series in Materials Science
Язык: English
Иллюстрации: 200 black & white illustrations, biography
Размер: 229 x 152 x 18
Читательская аудитория: Professional & vocational
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Германии
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.


Technology of Gallium Nitride Crystal Growth

Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski
Название: Technology of Gallium Nitride Crystal Growth
ISBN: 3642048285 ISBN-13(EAN): 9783642048289
Издательство: Springer
Рейтинг:
Цена: 23508.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Gallium Nitride And Silicon Carbide Power Devices

Автор: Baliga B Jayant
Название: Gallium Nitride And Silicon Carbide Power Devices
ISBN: 9813109408 ISBN-13(EAN): 9789813109407
Издательство: World Scientific Publishing
Рейтинг:
Цена: 16790.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание:

"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."

IEEE Electrical Insulation Magazine

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.

This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.

Nitride Semiconductors: Handbook on Materials and Devices

Автор: Pierre Ruterana
Название: Nitride Semiconductors: Handbook on Materials and Devices
ISBN: 3527403876 ISBN-13(EAN): 9783527403875
Издательство: Wiley
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Цена: 26928.00 р.
Наличие на складе: Поставка под заказ.

Описание: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currely the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components.
This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Gallium Nitride Electronics

Автор: R?diger Quay
Название: Gallium Nitride Electronics
ISBN: 3642090982 ISBN-13(EAN): 9783642090981
Издательство: Springer
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Цена: 28732.00 р.
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Описание: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics;

Gallium Nitride Processing for Electronics, Sensors and Spintronics

Автор: Stephen J. Pearton; Cammy R. Abernathy; Fan Ren
Название: Gallium Nitride Processing for Electronics, Sensors and Spintronics
ISBN: 1849969655 ISBN-13(EAN): 9781849969659
Издательство: Springer
Рейтинг:
Цена: 26120.00 р.
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Описание:

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the world's leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.


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