Gallium Nitride Processing for Electronics, Sensors and Spintronics, Stephen J. Pearton; Cammy R. Abernathy; Fan Ren
Автор: R?diger Quay Название: Gallium Nitride Electronics ISBN: 3642090982 ISBN-13(EAN): 9783642090981 Издательство: Springer Рейтинг: Цена: 28732.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics;
Автор: Xia Название: Semiconductor Spintronics ISBN: 9814327905 ISBN-13(EAN): 9789814327909 Издательство: World Scientific Publishing Рейтинг: Цена: 27720.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results. This monograph summarizes the physical foundation and the experimental results obtained in this field.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642263895 ISBN-13(EAN): 9783642263897 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: Tomasz Dietl Название: Spintronics,82 ISBN: 0080449565 ISBN-13(EAN): 9780080449562 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Поставка под заказ.
Описание: The ultimate aim of researchers in spintronics is to develop new devices which exploit the spin of an electron instead of, or in addition to, its electronic charge. Spintronics has emerged as one of the fastest growing areas of research. This text examines technological spintronic developments.
Автор: Awschalom et al Название: Semiconductor spintronics and quantum computation ISBN: 3642075770 ISBN-13(EAN): 9783642075773 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This field of semiconductor "spintronics" (spin transport electron- ics or spin-based electronics) places electron spin rather than charge at the very center of interest.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642048285 ISBN-13(EAN): 9783642048289 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: Baliga B Jayant Название: Gallium Nitride And Silicon Carbide Power Devices ISBN: 9813109408 ISBN-13(EAN): 9789813109407 Издательство: World Scientific Publishing Рейтинг: Цена: 16790.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."
IEEE Electrical Insulation Magazine
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru