Автор: Stephen J. Pearton; Cammy R. Abernathy; Fan Ren Название: Gallium Nitride Processing for Electronics, Sensors and Spintronics ISBN: 1849969655 ISBN-13(EAN): 9781849969659 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.
Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.
Written by three of the world's leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642048285 ISBN-13(EAN): 9783642048289 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: Baliga B Jayant Название: Gallium Nitride And Silicon Carbide Power Devices ISBN: 9813109408 ISBN-13(EAN): 9789813109407 Издательство: World Scientific Publishing Рейтинг: Цена: 16790.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."
IEEE Electrical Insulation Magazine
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Автор: Dirk Ehrentraut; Elke Meissner; Michal Bockowski Название: Technology of Gallium Nitride Crystal Growth ISBN: 3642263895 ISBN-13(EAN): 9783642263897 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Автор: Feng Zhe Chuan Название: Iii-Nitride Materials, Devices And Nano-Structures ISBN: 1786343185 ISBN-13(EAN): 9781786343185 Издательство: World Scientific Publishing Рейтинг: Цена: 21384.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.
The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura "for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources". Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.
Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.
Автор: Gianni Ciofani Название: Boron Nitride Nanotubes in Nanomedicine ISBN: 0323389457 ISBN-13(EAN): 9780323389457 Издательство: Elsevier Science Рейтинг: Цена: 17517.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: "
Boron Nitride Nanotubes in Nanomedicine" compiles, for the first time in a single volume, all the information needed by researchers interested in this promising type of smart nanoparticles and their applications in biomedicine. Boron nitride nanotubes (BNNTs) represent an innovative and extremely intriguing class of nanomaterials.
After introducing BNNTs and explaining their preparation and evaluation, the book shows how the physical, chemical, piezoelectric and biocompatibility properties of these nanotubes give rise to their potential uses in biomedicine. Evidence is offered (from both in vitro and in vivo investigations) for how BNNTs can be useful in biomedical and nanomedicine applications such as therapeutic applications, tissue regeneration, nanovectors for drug delivery, and intracellular nanotransducers. Covers a range of promising biomedical BNNT applicationsProvides great value not just to academics but also industry researchers in fields such as materials science, molecular biology, pharmacology, biomedical engineering, and biophysical sciencesOffers evidence for how BNNTs can be useful in biomedical and nanomedicine applications such as therapy, tissue regeneration, nanovectors for drug delivery, and intracellular nanotransducersIncorporates, for the first time in a single volume, all the information needed by researchers interested in this promising type of smart nanoparticles and their applications in biomedicine
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