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Advanced Nanoelectronics - Post-Silicon Materials and Devices, Hussain


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Автор: Hussain   (Хуссейн)
Название:  Advanced Nanoelectronics - Post-Silicon Materials and Devices
Перевод названия: Хуссейн: Усовершенствованная наноэлектроника - пост-кремниевые материалы и устройства
ISBN: 9783527343584
Издательство: Wiley
Классификация:
ISBN-10: 352734358X
Обложка/Формат: Hardback
Страницы: 288
Вес: 0.70 кг.
Дата издания: 28.11.2018
Серия: Physics,Mechanical engineering & materials,Electronics & communications engineering
Язык: English
Размер: 248 x 177 x 19
Читательская аудитория: Professional & vocational
Ключевые слова: Physics,Mechanical engineering & materials,Electronics & communications engineering
Основная тема: Electronic Materials
Подзаголовок: Post-silicon materials and devices
Ссылка на Издательство: Link
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Поставляется из: Англии
Описание: Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology

Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities.

Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN.

-Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices
-Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics
-Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology
-Brings together the latest developments in the field for easy reference
-Enables academic and R&D researchers in semiconductors to think outside the box and explore beyond silica

An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.



Silicon Nanoelectronics

Автор: Oda
Название: Silicon Nanoelectronics
ISBN: 0824726332 ISBN-13(EAN): 9780824726331
Издательство: Taylor&Francis
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Цена: 33686.00 р.
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Описание: Technological advancement in chip development, based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. This work takes a look at the development of novel devices and materials that hold great promise for the creation of still smaller and powerful chips.

Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics — 2009

Автор: Gall
Название: Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics — 2009
ISBN: 1107408318 ISBN-13(EAN): 9781107408319
Издательство: Cambridge Academ
Цена: 4277.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics — 2009

Автор: Gall
Название: Materials, Processes and Reliability for Advanced Interconnects for Micro- and Nanoelectronics — 2009
ISBN: 1605111295 ISBN-13(EAN): 9781605111292
Издательство: Cambridge Academ
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Цена: 15523.00 р.
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Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics

Автор: Lin
Название: Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
ISBN: 1107408717 ISBN-13(EAN): 9781107408715
Издательство: Cambridge Academ
Цена: 4277.00 р.
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Описание: This book provides a forum to exchange advances in materials, processes, integration, and reliability in advanced interconnects and packaging. The book also addresses interconnects for emerging technologies, including 3D chip stacking and optical interconnects, as well as interconnects for optoelectronics, plastic electronics and molecular electronics.

Semiconductor-On-Insulator Materials for Nanoelectronics Applications

Автор: Alexei Nazarov; J.-P. Colinge; Francis Balestra; J
Название: Semiconductor-On-Insulator Materials for Nanoelectronics Applications
ISBN: 3642267084 ISBN-13(EAN): 9783642267086
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Devoted to the evolving field of modern nanoelectronics, this volume presents the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. Topics include new semiconductor-on-insulator materials, physics of modern SemOI devices, and MEMS on SOI.

Lessons From Nanoelectronics: A New Perspective On Transport

Автор: Datta Supriyo
Название: Lessons From Nanoelectronics: A New Perspective On Transport
ISBN: 9814335290 ISBN-13(EAN): 9789814335294
Издательство: World Scientific Publishing
Цена: 5544.00 р.
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Описание:

Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms in length.

These lecture notes are about a less appreciated by-product of the microelectronics revolution, namely the deeper understanding of current flow, and device operation that it has enabled, which forms the basis for a new approach to transport problems.

The book assumes very little background beyond linear algebra and differential equations, and is intended to be accessible to anyone in any branch of science or engineering.

Readers are encouraged to visit the website http: //nanohub.org/groups/lnebook to access revisions, corrections, video lectures, tutorials, quizzes and also to join a Q&A forum based on questions from readers.

Nanoelectronics: A Molecular View

Автор: Ghosh Avik
Название: Nanoelectronics: A Molecular View
ISBN: 9813146222 ISBN-13(EAN): 9789813146228
Издательство: World Scientific Publishing
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Цена: 10296.00 р.
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Описание: 'This is one of the best available graduate-level textbooks on electronic transport at the nanoscale. Its unique feature is providing a thorough and completely self-contained treatment of several theoretical formalisms for treating the transport problem. As such, the book is useful not only for the graduate students working in the field of nanoscale electrical transport, but also for the researchers who wish to expand their knowledge of various fundamental issues associated with this rapidly developing field. Of particular note are deep physical insights accompanying the rigorous mathematical derivations in each of the chapters, as well as the clear statement of all the approximations involved in a particular theoretical formalism. This winning combination makes the book very accessible to a reader with basic knowledge of quantum mechanics, solid state theory and thermodynamics/statistical mechanics. I give this book the highest recommendation.' [Read Full Review]Serfei A EgorovUniveristy of Virginia, USAThis book is aimed at senior undergraduates, graduate students and researchers interested in quantitative understanding and modeling of nanomaterial and device physics. With the rapid slow-down of semiconductor scaling that drove information technology for decades, there is a pressing need to understand and model electron flow at its fundamental molecular limits. The purpose of this book is to enable such a deconstruction needed to design the next generation memory, logic, sensor and communication elements. Through numerous case studies and topical examples relating to emerging technology, this book connects 'top down' classical device physics taught in electrical engineering classes with 'bottom up' quantum and many-body transport physics taught in physics and chemistry. The book assumes no more than a nodding acquaintance with quantum mechanics, in addition to knowledge of freshman level mathematics. Segments of this book are useful as a textbook for a course in nano-electronics.


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