Описание: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices.
Описание: Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au- tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation.
Описание: Fault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microscopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.
This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices.
Автор: Inder P. Batra Название: Metallization and Metal-Semiconductor Interfaces ISBN: 1461280869 ISBN-13(EAN): 9781461280866 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of a NATO ARW held at the Technical University of Munich, Garching, Germany, August 22-26, 1988
Описание: In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature.
Автор: Ulrike Woggon Название: Optical Properties of Semiconductor Quantum Dots ISBN: 3662148129 ISBN-13(EAN): 9783662148129 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: After providing the reader with a theoretical background, the author illustrates the specific properties of three-dimensionally confined semiconductors, such as the size dependence of energy states, optical transitions, and dephasing mechanisms with the results from numerous experiments in linear and nonlinear spectroscopy.
Описание: This monograph gives a detailed introductory exposition of research results for various models, mostly two-dimensional, of directed walks, interfaces, wetting, surface adsorption (of polymers), stacks, compact clusters (lattice animals), etc.
Описание: Christian Rockenhauser adresses phase formation and cation interdiffusion of the GdxCe1-xO2-x/2-and SmxCe1-xO2-x/2-material systems at temperatures ranging from 970 to 1270 DegreesC.
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