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Epitaxial Graphene on Silicon Carbide: Modelling, Characterization, and Applications, Gemma Rius, Philippe Godignon



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Цена: 18247р.
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Автор: Gemma Rius, Philippe Godignon
Название:  Epitaxial Graphene on Silicon Carbide: Modelling, Characterization, and Applications
ISBN: 9789814774208
Издательство: Taylor&Francis
Классификация:
ISBN-10: 9814774200
Обложка/Формат: Hardback
Страницы: 260
Вес: 0.567 кг.
Дата издания: 26.03.2018
Язык: English
Иллюстрации: 6 tables, black and white; 26 illustrations, color; 74 illustrations, black and white
Размер: 163 x 236 x 21
Читательская аудитория: Tertiary education (us: college)
Ключевые слова: Materials science, SCIENCE / Physics / Condensed Matter,TECHNOLOGY & ENGINEERING / Materials Science
Основная тема: Materials science, SCIENCE / Physics / Condensed Matter,TECHNOLOGY & ENGINEERING / Materials Science
Подзаголовок: Modeling, characterization, and applications
Рейтинг:
Описание: This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition.   The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.
Дополнительное описание: Epitaxial Graphene on SiC Substrate: A View from a Specialist of SiC Growth and Material Science Gabriel Ferro Growth Mechanism, Structures, and the Properties of Graphene on SiC {0001} Surfaces: Theoretical and Experimental Studies at the Atomic Scale



Graphene,

Автор: Jamie H. Warner
Название: Graphene,
ISBN: 0123945933 ISBN-13(EAN): 9780123945938
Издательство: Elsevier Science
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Цена: 16422 р.
Наличие на складе: Нет в наличии.

Описание: Covers fundamental groundwork of the structure, property, characterization methods and applications of graphene, along with the necessary knowledge of graphene`s atomic structure. This book discusses graphene`s fundamental structure and properties, acting as a time-saving handbook for validated research.

Silicon Carbide Biotechnology

Автор: Stephen Saddow
Название: Silicon Carbide Biotechnology
ISBN: 0128029935 ISBN-13(EAN): 9780128029930
Издательство: Elsevier Science
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Цена: 25181 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: "

Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Second Edition, "provides the latest information on this wide-band-gap semiconductor material that the body does not reject as a foreign (i.e., not organic) material and its potential to further advance biomedical applications.

SiC devices offer high power densities and low energy losses, enabling lighter, more compact, and higher efficiency products for biocompatible and long-term in vivo applications, including heart stent coatings, bone implant scaffolds, neurological implants and sensors, glucose sensors, brain-machine-interface devices, smart bone implants, and organ implants.

This book provides the materials and biomedical engineering communities with a seminal reference book on SiC for developing technology, and is a resource for practitioners eager to identify and implement advanced engineering solutions to their everyday medical problems for which they currently lack long-term, cost-effective solutions.
Discusses the properties, processing, characterization, and application of silicon carbide biomedical materials and related technologyAssesses literature, patents, and FDA approvals for clinical trials, enabling rapid assimilation of data from current disparate sources and promoting the transition from technology R&D, to clinical trials Includes more on applications and devices, such as SiC nanowires, biofunctionalized devices, micro-electrode arrays, heart stent/cardiovascular coatings, and continuous glucose sensors, in this new edition

Silicon Carbide One-dimensional Nanostructures

Автор: Latu-Romain
Название: Silicon Carbide One-dimensional Nanostructures
ISBN: 1848217978 ISBN-13(EAN): 9781848217973
Издательство: Wiley
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Цена: 23844 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.

Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications

Автор: Tsunenobu Kimoto,James A. Cooper
Название: Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications
ISBN: 1118313526 ISBN-13(EAN): 9781118313527
Издательство: Wiley
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Цена: 20755 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

Silicon Carbide 2008 — Materials, Processing and Devices

Автор: Dudley
Название: Silicon Carbide 2008 — Materials, Processing and Devices
ISBN: 1605110396 ISBN-13(EAN): 9781605110394
Издательство: Cambridge Academ
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Цена: 14069 р.
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Описание: Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.

Modeling of Carbon Nanotubes, Graphene and Their Composites

Автор: Tserpes Konstantinos I
Название: Modeling of Carbon Nanotubes, Graphene and Their Composites
ISBN: 3319012002 ISBN-13(EAN): 9783319012001
Издательство: Springer
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Цена: 20025 р.
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Описание: The scope of the book is to provide current knowledge aiming to support researchers entering the scientific area of carbon nanotubes to choose the appropriate modeling tool for accomplishing their study and place their efforts to further improve continuum methods.

Graphene-Carbon Nanotube Hybrids for Energy and Environmental Applications

Автор: Wei Fan; Longsheng Zhang; Tianxi Liu
Название: Graphene-Carbon Nanotube Hybrids for Energy and Environmental Applications
ISBN: 9811028028 ISBN-13(EAN): 9789811028021
Издательство: Springer
Рейтинг:
Цена: 8417 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book describes various carbon nanomaterials and their unique properties, and offers a detailed introduction to graphene-carbon nanotube (CNT) hybrids. Further, it discusses the preparation, structures and properties of graphene-CNT hybrids, providing interesting examples of three types of graphene-CNT hybrids with different nanostructures.


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