Analysis and Simulation of Semiconductor Devices, S. Selberherr

Автор: Grasser Tibor, Selberherr Siegfried
Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
Издательство: Springer
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Цена: 25853.00 р.
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Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.

Автор: Wai Kin Chim
Название: Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
ISBN: 047149240X ISBN-13(EAN): 9780471492405
Издательство: Wiley
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Цена: 30722.00 р.
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Описание: Fault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microscopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.

Автор: Dimitris Tsoukalas; Christos Tsamis
Название: Simulation of Semiconductor Processes and Devices 2001
ISBN: 3709172780 ISBN-13(EAN): 9783709172780
Издательство: Springer
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Цена: 19591.00 р.
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Описание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5-7, 2001, in Athens.

Автор: Vassil Palankovski; R?diger Quay
Название: Analysis and Simulation of Heterostructure Devices
ISBN: 3709171938 ISBN-13(EAN): 9783709171936
Издательство: Springer
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Цена: 22359.00 р.
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Описание: The topic of this monograph is the physical modeling of heterostructure devices.

Автор: Carlo Jacoboni; Paolo Lugli
Название: The Monte Carlo Method for Semiconductor Device Simulation
ISBN: 3709174538 ISBN-13(EAN): 9783709174531
Издательство: Springer
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Цена: 26122.00 р.
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Описание: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.