Point Defects in Semiconductors and Insulators, Hans-Joachim Queisser; Johann-Martin Spaeth; Haral
Автор: J. Friedel; M. Lannoo Название: Point Defects in Semiconductors I ISBN: 3642815766 ISBN-13(EAN): 9783642815768 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of `band theory` can be safely used to study its interesting electronic properties.
Автор: Khler Anna Название: Electronic Processes in Organic Semiconductors ISBN: 3527332928 ISBN-13(EAN): 9783527332922 Издательство: Wiley Рейтинг: Цена: 10288.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The first advanced textbook to focus on the fundamentals in a brief, coherent and comprehensive way. Based on one of the author`s proven lecture course, it prepares students to understand the many multi-authored books available that discuss a particular aspect in more detail.
Автор: Bengt G. Svensson Название: Oxide Semiconductors,88 ISBN: 012396489X ISBN-13(EAN): 9780123964892 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Поставка под заказ.
Описание: Suitable for physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.
Автор: Holt Название: Extended Defects in Semiconductors ISBN: 1107424143 ISBN-13(EAN): 9781107424142 Издательство: Cambridge Academ Рейтинг: Цена: 11405.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Описание: Proceedings of SPIE offer access to the latest innovations in research and technology and are among the most cited references in patent literature.
Автор: Lucia Romano Название: Defects in Semiconductors,91 ISBN: 0128019352 ISBN-13(EAN): 9780128019351 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
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