Neutron Transmutation Doping in Semiconductors, J. Meese
Автор: Bengt G. Svensson Название: Oxide Semiconductors,88 ISBN: 012396489X ISBN-13(EAN): 9780123964892 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Поставка под заказ.
Описание: Suitable for physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.
Описание: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currely the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.
Автор: Khler Anna Название: Electronic Processes in Organic Semiconductors ISBN: 3527332928 ISBN-13(EAN): 9783527332922 Издательство: Wiley Рейтинг: Цена: 10288.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The first advanced textbook to focus on the fundamentals in a brief, coherent and comprehensive way. Based on one of the author`s proven lecture course, it prepares students to understand the many multi-authored books available that discuss a particular aspect in more detail.
Автор: Hadis Morko? Название: Nitride Semiconductors and Devices ISBN: 3642636470 ISBN-13(EAN): 9783642636479 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers.
Описание: This thesis breaks new ground in the physics of photonic circuits for quantum optical applications, offering the first demonstration of a spin-photon interface using an all-waveguide geometry, and a number of other highly novel contributions to the field.
Автор: Kong-Thon Tsen Название: Ultrafast Phenomena in Semiconductors ISBN: 1461265622 ISBN-13(EAN): 9781461265627 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: There are many books in the market devoted to the review of certain fields. As a result, researchers who are already in the field of ultrafast dynamics in semicon- ductors and its device applications as well as researchers and graduate students just entering the field will benefit from it.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3642627226 ISBN-13(EAN): 9783642627224 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
Описание: The research done in this field will help to widen the scope of semi- conductor applications by finding novel ways of employing surface effects in the construct ion of mi croe 1 ectroni c devi ces, semi conductor gas ana lysers, solar cells, etc.
Описание: This volume contains the Proceedings of the NATO Advanced Research Workshop on "Growth and Optical Properties of Wide Gap II-VI Low Dimensional Semiconductors", held from 2 - 6 August 1988 in Regensburg, Federal Republic of Germany, under the auspices of the NATO International Scientific Exchange Programme.
Автор: L. Reggiani; M. Asche; C. Canali; E. Constant; K. Название: Hot-Electron Transport in Semiconductors ISBN: 3662309351 ISBN-13(EAN): 9783662309353 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
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