Scanning Electron Microscopy and X-Ray Microanalysis, Joseph Goldstein; Dale E. Newbury; Patrick Echlin;

Автор: Kenichi Shimizu; Tomoaki Mitani
Название: New Horizons of Applied Scanning Electron Microscopy
ISBN: 364226168X ISBN-13(EAN): 9783642261688
Издательство: Springer
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Цена: 15672.00 р.
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Описание: In modern scanning electron microscopy, sample surface preparation is of key importance. This book presents the procedures for sample surface preparation, thereby facilitating unprecedented capabilities with advanced scanning electron microscopes.

Автор: Zhong Lin Wang, Weilie Zhou
Название: Scanning microscopy for nanotechnology
ISBN: 0387333258 ISBN-13(EAN): 9780387333250
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Scanning electron microscopy (SEM) can be exploited not only for nanomaterials characterization but also integrated with new technologies for in-situ nanomaterials engineering and manipulation. Scanning Microscopy for Nanotechnology addresses the rapid development of these techniques for nanotechnology, in both technique and application chapters by leading practitioners. The book covers topics including nanomaterials imaging, X-ray microanalysis, high-resolution SEM, low kV SEM, cryo-SEM, as well as new techniques such as electron back scatter diffraction (EBSD) and scanning transmission electron microscopy (STEM). Fabrication techniques integrated with SEM, such as e-beam nanolithography, nanomanipulation, and focused ion beam nanofabrication, are major new dimensions for SEM application. Application areas include the study of nanoparticles, nanowires and nanotubes, three-dimensional nanostructures, quantum dots, magnetic nanomaterials, photonic structures, and bio-inspired nanomaterials. This book will appeal not only to a broad spectrum of nanomaterials researchers, but also to SEM development specialists.

Автор: Joseph Goldstein; Dale Newbury; David Joy; Joseph
Название: Scanning Electron Microscopy and X-Ray Microanalysis
ISBN: 149396674X ISBN-13(EAN): 9781493966745
Издательство: Springer
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Цена: 13974.00 р.
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Описание: This thoroughly revised and updated Fourth Edition of a time-honored text provides the reader with a comprehensive introduction to the field of scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDS) for elemental microanalysis, electron backscatter diffraction analysis (EBSD) for micro-crystallography, and focused ion beams. Students and academic researchers will find the text to be an authoritative and scholarly resource, while SEM operators and a diversity of practitioners - engineers, technicians, physical and biological scientists, clinicians, and technical managers - will find that every chapter has been overhauled to meet the more practical needs of the technologist and working professional. In a break with the past, this Fourth Edition de-emphasizes the design and physical operating basis of the instrumentation, including the electron sources, lenses, detectors, etc.

In the modern SEM, many of the low level instrument parameters are now controlled and optimized by the microscope's software, and user access is restricted. Although the software control system provides efficient and reproducible microscopy and microanalysis, the user must understand the parameter space wherein choices are made to achieve effective and meaningful microscopy, microanalysis, and micro-crystallography. Therefore, special emphasis is placed on beam energy, beam current, electron detector characteristics and controls, and ancillary techniques such as energy dispersive x-ray spectrometry (EDS) and electron backscatter diffraction (EBSD).

With 13 years between the publication of the third and fourth editions, new coverage reflects the many improvements in the instrument and analysis techniques. The SEM has evolved into a powerful and versatile characterization platform in which morphology, elemental composition, and crystal structure can be evaluated simultaneously. Extension of the SEM into a "dual beam" platform incorporating both electron and ion columns allows precision modification of the specimen by focused ion beam milling.

New coverage in the Fourth Edition includes the increasing use of field emission guns and SEM instruments with high resolution capabilities, variable pressure SEM operation, theory, and measurement of x-rays with high throughput silicon drift detector (SDD-EDS) x-ray spectrometers. In addition to powerful vendor- supplied software to support data collection and processing, the microscopist can access advanced capabilities available in free, open source software platforms, including the National Institutes of Health (NIH) ImageJ-Fiji for image processing and the National Institute of Standards and Technology (NIST) DTSA II for quantitative EDS x-ray microanalysis and spectral simulation, both of which are extensively used in this work. However, the user has a responsibility to bring intellect, curiosity, and a proper skepticism to information on a computer screen and to the entire measurement process.

This book helps you to achieve this goal. Realigns the text with the needs of a diverse audience from researchers and graduate students to SEM operators and technical managersEmphasizes practical, hands-on operation of the microscope, particularly user selection of the critical operating parameters to achieve meaningful resultsProvides step-by-step overviews of SEM, EDS, and EBSD and checklists of critical issues for SEM imaging, EDS x-ray microanalysis, and EBSD crystallographic measurementsMakes extensive use of open source software: NIH ImageJ-FIJI for image processing and NIST DTSA II for quantitative EDS x-ray microanalysis and EDS spectral simulation. Includes case studies to illustrate practical problem solvingCovers Helium ion scanning microscopyOrganized into relatively self-contained modules - no need to "read it all" to understand a topicIncludes an online supplement-an extensive "Database of Electron-Solid Interactions"-which can be accessed on SpringerLink, in Chapter 3

Автор: Joseph Goldstein; Dale E. Newbury; David C. Joy; C
Название: Scanning Electron Microscopy and X-ray Microanalysis
ISBN: 1461349699 ISBN-13(EAN): 9781461349693
Издательство: Springer
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Цена: 10448.00 р.
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Описание: An ideal text for students as well as practitioners, this is a comprehensive introduction to the field of scanning electron microscopy (SEM) and X-ray microanalysis. The authors emphasize the practical aspects of the techniques described.

Автор: Joseph Goldstein
Название: Practical Scanning Electron Microscopy
ISBN: 1461344247 ISBN-13(EAN): 9781461344247
Издательство: Springer
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Цена: 16979.00 р.
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Описание: In the spring of 1963, a well-known research institute made a market survey to assess how many scanning electron microscopes might be sold in the United States. This range overlaps considerably with the light microscope at the low end, and with the electron microscope at the high end.

Автор: Samuel H. Cohen; Marcia L. Lightbody
Название: Atomic Force Microscopy/Scanning Tunneling Microscopy 2
ISBN: 1475793278 ISBN-13(EAN): 9781475793277
Издательство: Springer
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Цена: 19591.00 р.
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Описание: Proceedings of the Second Symposium held in Natick, Massachusetts, June7-9, 1994

Автор: Samuel H. Cohen; Marcia L. Lightbody
Название: Atomic Force Microscopy/Scanning Tunneling Microscopy 3
ISBN: 1475781849 ISBN-13(EAN): 9781475781847
Издательство: Springer
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Цена: 19591.00 р.
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Описание: The Foundation for Advances in Medicine and Science (FAMS), the organizers of SCANNING 98, sponsored its third annual Atomic Force Microscopy/Scanning Tunneling Microscopy Symposium at the Omni Inner Harbor Hotelin Baltimore, Maryland, from May 9 to 12, 1998.