Описание: The authors describe an integrated, indoor light energy harvesting system, based on a controller circuit that dynamically and automatically adjusts its operation to meet the actual light circumstances of the environment where the system is placed.
Автор: Ebrahim Ghafar-Zadeh; Mohamad Sawan Название: CMOS Capacitive Sensors for Lab-on-Chip Applications ISBN: 9048137268 ISBN-13(EAN): 9789048137268 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes all required components for the design of a CMOS capacitive biosensor. It extensively reviews recent literature on using CMOS processes for Lab-on-Chip applications and emphasizes practical aspects of fully-integrated capacitive biosensors.
Автор: Pilar Gonzalez Ruiz; Kristin De Meyer; Ann Witvrou Название: Poly-SiGe for MEMS-above-CMOS Sensors ISBN: 9400767986 ISBN-13(EAN): 9789400767980 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 ГЇВїВЅ ГЇВїВЅm Cu-backend CMOS.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Elie Maricau; Georges Gielen Название: Analog IC Reliability in Nanometer CMOS ISBN: 1461461626 ISBN-13(EAN): 9781461461623 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.
Автор: Jiann-Shiun Yuan Название: CMOS RF Circuit Design for Reliability and Variability ISBN: 9811008825 ISBN-13(EAN): 9789811008825 Издательство: Springer Рейтинг: Цена: 8489.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits.
Описание: This book presents high-/mixed-voltage analog and radio frequency (RF) circuit techniques for developing low-cost multistandard wireless receivers in nm-length CMOS processes. It includes novel high-/mixed-voltage analog and RF circuit techniques.
Описание: This book describes synergetic innovation opportunities offered by combining the field of power conversion with the field of integrated circuit (IC) design. The authors demonstrate how integrating circuits enables increased operation frequency, which can be exploited in power converters to reduce drastically the size of the discrete passive components. The authors introduce multiple power converter circuits, which are very compact as result of their high level of integration. First, the limits of high-power-density low-voltage monolithic switched-capacitor DC-DC conversion are investigated to enable on-chip power granularization. AC-DC conversion from the mains to a low voltage DC is discussed, enabling an efficient and compact, lower-power auxiliary power supply to take over the power delivery during the standby mode of mains-connected appliances, allowing the main power converter of these devices to be shut down fully.
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