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CMOS RF Circuit Design for Reliability and Variability, Jiann-Shiun Yuan


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Цена: 8489.00р.
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Автор: Jiann-Shiun Yuan
Название:  CMOS RF Circuit Design for Reliability and Variability
ISBN: 9789811008825
Издательство: Springer
Классификация:

ISBN-10: 9811008825
Обложка/Формат: Soft cover
Страницы: 112
Вес: 0.19 кг.
Дата издания: 21.04.2016
Серия: Springerbriefs in applied sciences and technology
Язык: English
Иллюстрации: 101 black & white illustrations, biography
Размер: 234 x 156 x 6
Читательская аудитория: General (us: trade)
Основная тема: Circuits and Systems
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits.


Cmos Analog Circuit Design 2E

Автор: Allen
Название: Cmos Analog Circuit Design 2E
ISBN: 0195116445 ISBN-13(EAN): 9780195116441
Издательство: Oxford Academ
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Цена: 7920.00 р.
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Описание: "CMOS Analog Circuit Design" provides beginning engineers with an overview of the principles and techniques for designing analog circuits to be implemented in CMOS technology. It combines the academic and practical viewpoints in an accessible and comprehensive text, suitable for upper level undergraduates and graduate students taking courses in analog electronics and analog design.

Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies

Автор: Michael Fulde
Название: Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
ISBN: 9048132797 ISBN-13(EAN): 9789048132799
Издательство: Springer
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Цена: 19591.00 р.
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Описание: This book offers a technology-oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Coverage includes transient threshold voltage variations and integration of tunnel transistors in a multi-gage process.

Analog IC Reliability in Nanometer CMOS

Автор: Elie Maricau; Georges Gielen
Название: Analog IC Reliability in Nanometer CMOS
ISBN: 1461461626 ISBN-13(EAN): 9781461461623
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Автор: Jacopo Franco; Ben Kaczer; Guido Groeseneken
Название: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
ISBN: 9400776624 ISBN-13(EAN): 9789400776623
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

CMOS: Circuit Design, Layout, and Simulation, 2nd Edition

Автор: R. Jacob Baker
Название: CMOS: Circuit Design, Layout, and Simulation, 2nd Edition
ISBN: 047170055X ISBN-13(EAN): 9780471700555
Издательство: Wiley
Цена: 9338.00 р.
Наличие на складе: Поставка под заказ.

Описание: Praise for CMOS: Circuit Design, Layout, and Simulation, Second Edition from the Technical Reviewers
"A refreshing industrial flavor. Design concepts are presented as they are needed for 'just-in-time' learning. Simulating and designing circuits using SPICE is emphasized with literally hundreds of examples. Very few textbooks contain as much detail as this one. Highly recommended!"
-Paul M. Furth, New Mexico State University
"This book builds a solid knowledge of CMOS circuit design from the ground up. With coverage of process integration, layout, analog and digital models, noise mechanisms, memory circuits, references, amplifiers, PLLs/DLLs, dynamic circuits, and data converters, the text is an eellent reference for both experienced and novice designers alike."
-Tyler J. Gomm, Design Engineer, Micron Technology, Inc.
"The second edition builds upon the success of the first with new chapters that cover additional material such as oversampled converters and non-volatile memories. This is becoming the de facto standard textbook to have on every analog and mixed-signal designer's bookshelf."
-Joe Walsh, Design Engineer, AMI Semiconductor
CMOS circuits from design to implementation
CMOS: Circuit Design, Layout, and Simulation, Second Edition covers the practical design of both analog and digital integrated circuits, offering a vital contemporary view of a wide range of analog/digital circuit blocks, the BSIM model, data converter architectures, and much more. This edition takes a two-path approach to the topics; design techniques are developed for both long- and short-channel CMOS technologies and then compared. The results are multidimensional explanations that allow readers deep insight into the design process. Features include:
* Integrated-circuit layout software for Windows designed by David Boyce
* Updated materials to reflect CMOS technology's movement into nanometer sizes
* Discussions on phase- and delay-locked loops, mixed-signal circuits, data converters, and circuit noise
* More than 1,000 figures, 200 examples, and over 500 end-of-chapter problems
* In-depth coverage of both analog and digital circuit-level design techniques
* Real-world process parameters and design rules
* Associated Web site (cmosedu.com) provides examples, solutions, and SPICE simulation netlists

Low Power RF Circuit Design in Standard CMOS Technology

Автор: Unai Alvarado; Guillermo Bistu?; I?igo Ad?n
Название: Low Power RF Circuit Design in Standard CMOS Technology
ISBN: 3642269621 ISBN-13(EAN): 9783642269622
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book presents basic techniques for designing low power RF CMOS analogue circuits, offering a set of alternatives to optimize power consumption and explaining the application of these rules in the most common RF building blocks: LNA, mixers and PLLs.


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