Single Charge Tunneling, Hermann Grabert; Michel H. Devoret

Автор: Axel U. J. Lode
Название: Tunneling Dynamics in Open Ultracold Bosonic Systems
ISBN: 3319070843 ISBN-13(EAN): 9783319070841
Издательство: Springer
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Цена: 15672.00 р.
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Описание: The present work uses numerically exact solutions of the time-dependent many-boson Schrodinger equation to explore the rich physics of the tunneling to open space process in ultracold bosonic particles that are initially prepared as a Bose-Einstein condensate and subsequently allowed to tunnel through a barrier to open space.

Автор: Henning Pr?ser
Название: Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities
ISBN: 3319063847 ISBN-13(EAN): 9783319063843
Издательство: Springer
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Цена: 18167.00 р.
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Описание: Magnetic impurities in a non-magnetic host metal have been actively explored in condensed matter physics in recent last decades. This thesis contains a comprehensive description of the STM /STS technique, sub-surface impurities, as well as single- and two-impurity Kondo physics - and as such offers a valuable introduction to newcomers to the field.

Автор: K.v. Klitzing; Hans Koch; Heinz L?bbig
Название: Single-Electron Tunneling and Mesoscopic Devices
ISBN: 3642772765 ISBN-13(EAN): 9783642772764
Издательство: Springer
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Описание: At first glance it seems strange that a conference abbreviated SQUID`91 should attract so many papers on non-superconducting devices, and in fact the first SQUID`XX conferences dealt exclusively with the physics and technology of Josephson junctions, SQUIDs and other superconducting devices and their ap- plications.

Автор: Lining Zhang; Mansun Chan
Название: Tunneling Field Effect Transistor Technology
ISBN: 3319316516 ISBN-13(EAN): 9783319316512
Издательство: Springer
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Цена: 16070.00 р.
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Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

Автор: Elias Burstein
Название: Tunneling Phenomena in Solids
ISBN: 1468417541 ISBN-13(EAN): 9781468417548
Издательство: Springer
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Цена: 15672.00 р.
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Описание: The aim of this volume is to provide advanced predoctoral students and young postdoctoral physicists with an opportunity to study the concepts of tunneling phenomena in solids and the theoretical and experimental techniques for their investigation.