Tunneling Field Effect Transistor Technology, Lining Zhang; Mansun Chan

Автор: Supriya Karmakar
Название: Novel Three-state Quantum Dot Gate Field Effect Transistor
ISBN: 8132216342 ISBN-13(EAN): 9788132216346
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book explores fabrication and circuit modeling of quantum dot gate field effect transistor (QDGFET) and quantum dot gate NMOS inverter, introduces a circuit model of QDGFET based on Berkley Short Channel IGFET model and simulation of advanced circuits.

Автор: Bahl, Inder
Название: Fundamentals of rf and microwave transistor amplifiers
ISBN: 0470391669 ISBN-13(EAN): 9780470391662
Издательство: Wiley
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Цена: 25336.00 р.
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Описание: Includes extensive design information in the form of equations, tables, graphs and examples. Offers an in-depth study of amplifiers. Simple design equations are included to help understand design concepts. Practical and simple to understand examples with over 70 fully solved.

Автор: Thompson
Название: Transistor Scaling
ISBN: 1558998691 ISBN-13(EAN): 9781558998698
Издательство: Cambridge Academ
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Цена: 5069.00 р.
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Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book shares results and physical models related to MOSFETs and to discuss innovative approaches necessary to continue the transistor scaling. Expanded versions of presentations in the areas of technology development are featured