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Semiconductor Modeling:, Roy Leventhal; D.J. Carpenter; Lynne Green


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Цена: 22201.00р.
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Автор: Roy Leventhal; D.J. Carpenter; Lynne Green
Название:  Semiconductor Modeling:
ISBN: 9781489991379
Издательство: Springer
Классификация:





ISBN-10: 1489991379
Обложка/Формат: Paperback
Страницы: 766
Вес: 1.09 кг.
Дата издания: 16.11.2014
Язык: English
Размер: 234 x 156 x 40
Основная тема: Engineering
Подзаголовок: For Simulating Signal, Power, and Electromagnetic Integrity
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание:

Semiconductor Modeling: For Simulating Signal, Power, and Electromagnetic Integrity assists engineers - both recent graduates and working product designers - in designing high-speed circuits. The authors apply circuit theory, circuit simulation tools, and practical experience to help the engineer understand semiconductor modeling as applied to high-speed digital designs. The emphasis is on semiconductor modeling, with PCB transmission line effects, equipment enclosure effects, and other modeling issues discussed as needed. The text addresses many practical considerations, including process variation, model accuracy, validation and verification, signal integrity, and design flow. Readers will benefit from its survey of modeling for semiconductors, packages, and interconnects, along with usable advice on how to get complex, high-speed prototypes to work on the first try.

Highlights include:

- Presents a very complete and well-balanced treatment of modeling of semiconductors, packages, and interconnects. Facilitates reader comprehension of the whole field of high-speed modeling, including digital and RF circuits.

- Combines practical modeling techniques with the latest EDA tools for simulation and successful high-speed digital design. Facilitates resolution of practical, every-day problems.

- Presents modeling from its historical roots to current state of the art. Facilitates keeping abreast of the latest modeling developments as they continue to unfold.




Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy

Автор: Wai Kin Chim
Название: Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
ISBN: 047149240X ISBN-13(EAN): 9780471492405
Издательство: Wiley
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Цена: 30722.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Fault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microscopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.

Plasmonic Effects in Metal-Semiconductor Nanostructures

Автор: Toropov Alexey A
Название: Plasmonic Effects in Metal-Semiconductor Nanostructures
ISBN: 0199699313 ISBN-13(EAN): 9780199699315
Издательство: Oxford Academ
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Цена: 16632.00 р.
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Описание: This vibrant collected volume considers the question: how, exactly, did the relationship between trade and religion develop historically? Examining a wide range of commercial exchanges across religious boundaries around the Mediterranean Sea and the Atlantic and Indian Oceans during the second millennium, it offers a variety of perspectives on this intriguing and surprisingly neglected subject.

Semiconductor Nanomaterials for Flexible Technologies: From Photovoltaics and Electronics to Sensors and Energy Storage

Автор: Sun Yugang, Rogers John A.
Название: Semiconductor Nanomaterials for Flexible Technologies: From Photovoltaics and Electronics to Sensors and Energy Storage
ISBN: 0128102039 ISBN-13(EAN): 9780128102039
Издательство: Elsevier Science
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Цена: 27960.00 р.
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Описание: This book is an overview of the strategies to generate high-quality films of one-dimensional semiconductor nanostructures on flexible substrates (e.g., plastics) and the use of them as building blocks to fabricating flexible devices (including electronics, optoelectronics, sensors, power systems). In addition to engineering aspects, the physics and chemistry behind the fabrication and device operation will also be discussed as well. Internationally recognized scientists from academia, national laboratories, and industries, who are the leading researchers in the emerging areas, are contributing exceptional chapters according to their cutting-edge research results and expertise. This book will be an on-time addition to the literature in nanoscience and engineering. It will be suitable for graduate students and researchers as a useful reference to stimulate their research interest as well as facilitate their research in nanoscience and engineering.

Semiconductor Nanocrystals and Metal Nanoparticles

Автор: Tupei Chen
Название: Semiconductor Nanocrystals and Metal Nanoparticles
ISBN: 1439878307 ISBN-13(EAN): 9781439878309
Издательство: Taylor&Francis
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Цена: 29093.00 р.
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Описание:

Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next generation of electronic, optoelectronic, and photonic devices. Covering this rapidly developing and interdisciplinary field, the book examines in detail the physical properties and device applications of semiconductor nanocrystals and metal nanoparticles. It begins with a review of the synthesis and characterization of various semiconductor nanocrystals and metal nanoparticles and goes on to discuss in detail their optical, light emission, and electrical properties. It then illustrates some exciting applications of nanoelectronic devices (memristors and single-electron devices) and optoelectronic devices (UV detectors, quantum dot lasers, and solar cells), as well as other applications (gas sensors and metallic nanopastes for power electronics packaging).

  • Focuses on a new class of materials that exhibit fascinating physical properties and have many exciting device applications.
  • Presents an overview of synthesis strategies and characterization techniques for various semiconductor nanocrystal and metal nanoparticles.
  • Examines in detail the optical/optoelectronic properties, light emission properties, and electrical properties of semiconductor nanocrystals and metal nanoparticles.
  • Reviews applications in nanoelectronic devices, optoelectronic devices, and photonic devices.
Semiconductor Spintronics

Автор: Xia
Название: Semiconductor Spintronics
ISBN: 9814327905 ISBN-13(EAN): 9789814327909
Издательство: World Scientific Publishing
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Цена: 27720.00 р.
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Описание: Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results. This monograph summarizes the physical foundation and the experimental results obtained in this field.

Semiconductor Modeling Techniques

Автор: Xavier Marie; Naci Balkan
Название: Semiconductor Modeling Techniques
ISBN: 3642434673 ISBN-13(EAN): 9783642434679
Издательство: Springer
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Цена: 19589.00 р.
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Описание: This book describes the key theoretical techniques needed to quantitatively calculate and simulate the properties of semiconductor materials. Covers such techniques as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys.

Fundamentals of power semiconductor devices

Автор: Baliga, B,jayant
Название: Fundamentals of power semiconductor devices
ISBN: 0387473130 ISBN-13(EAN): 9780387473130
Издательство: Springer
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Цена: 30039.00 р.
Наличие на складе: Поставка под заказ.

Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.

Advances in Semiconductor Nanostructures

Автор: Latyshev, Alexander V.
Название: Advances in Semiconductor Nanostructures
ISBN: 0128105127 ISBN-13(EAN): 9780128105122
Издательство: Elsevier Science
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Цена: 23244.00 р.
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Описание:

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III-V, IV, and II-VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.

The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.


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