Resonant Tunneling, Lev Baskin; Pekka Neittaanm?ki; Boris Plamenevskii
Автор: Hiroshi Mizuta Название: The Physics and Applications of Resonant Tunnelling Diodes ISBN: 0521032520 ISBN-13(EAN): 9780521032520 Издательство: Cambridge Academ Рейтинг: Цена: 7602.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book gives a comprehensive description of the key theoretical and experimental aspects of resonant tunnelling diodes, one of the most important types of nanostructure devices. The book will be valuable to graduate students and researchers in quantum transport physics and device engineering.
Описание: This thesis focuses on the key technologies involved in magnetically coupled Wireless Power Transfer (WPT). As such, the thesis offers readers a deeper understanding of WPT technology, while also proposing insightful new advances.
Introduction.- Radiation Properties of Edge-coupled Split-ring Resonators (EC-SRRs) and Derived Structures.- Antenna and UHF-RFID Tag Design based on Split-ring Resonators and Derived Structures.- A High-Gain Passive UHF-RFID Tag with Increased Read Range.- Conclusions and Future Work.
Автор: Axel U. J. Lode Название: Tunneling Dynamics in Open Ultracold Bosonic Systems ISBN: 3319070843 ISBN-13(EAN): 9783319070841 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The present work uses numerically exact solutions of the time-dependent many-boson Schrodinger equation to explore the rich physics of the tunneling to open space process in ultracold bosonic particles that are initially prepared as a Bose-Einstein condensate and subsequently allowed to tunnel through a barrier to open space.
Автор: T. Wolfram Название: Inelastic Electron Tunneling Spectroscopy ISBN: 3642812309 ISBN-13(EAN): 9783642812309 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In addition to its role in surface studies, inelastic tunneling has proved extremely valuable for the study of the electronic properties of thin metallic films, and the recent discovery of light emission from inelastic tunneling promises to be of some importance in the area of device physics.
Автор: K.v. Klitzing; Hans Koch; Heinz L?bbig Название: Single-Electron Tunneling and Mesoscopic Devices ISBN: 3642772765 ISBN-13(EAN): 9783642772764 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: At first glance it seems strange that a conference abbreviated SQUID`91 should attract so many papers on non-superconducting devices, and in fact the first SQUID`XX conferences dealt exclusively with the physics and technology of Josephson junctions, SQUIDs and other superconducting devices and their ap- plications.
Автор: Youichi Murakami, Sumio Ishihara Название: Resonant X-Ray Scattering in Correlated Systems ISBN: 3662532255 ISBN-13(EAN): 9783662532256 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The research and its outcomes presented here is devoted to the use of x-ray scattering to study correlated electron systems and magnetism. Different x-ray based methods are provided to analyze three dimensional electron systems and the structure of transition-metal oxides.
Автор: Yuriy K. Sirenko; Staffan Str?m; Nataliya P. Yashi Название: Modeling and Analysis of Transient Processes in Open Resonant Structures ISBN: 1489989560 ISBN-13(EAN): 9781489989567 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes a systematic approach to scattering of transient fields which can be introduced in undergraduate or graduate courses. The methods developed and the mathematical and physical results obtained provide a basis on which a modern theory for the scattering of resonant non-harmonic waves can be developed.
Автор: V. I. Babitsky; Nicholas Birkett; Alexander Shipil Название: Resonant Robotic Systems ISBN: 364205563X ISBN-13(EAN): 9783642055638 Издательство: Springer Рейтинг: Цена: 16977.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Especially designed as self-sustaining oscillating systems, resonant robotic systems use the natural modes of oscillation of electromechanical modules for their movements. The authors summarize the results and experience of research on, and development of, resonant robotic systems.
Автор: V. I. Babitsky; Nicholas Birkett; Alexander Shipil Название: Resonant Robotic Systems ISBN: 3540003347 ISBN-13(EAN): 9783540003342 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Especially designed as self-sustaining oscillating systems, resonant robotic systems use the natural modes of oscillation of electromechanical modules for their movements. The authors summarize the results and experience of research on, and development of, resonant robotic systems.
Автор: Axel U. J. Lode Название: Tunneling Dynamics in Open Ultracold Bosonic Systems ISBN: 3319361341 ISBN-13(EAN): 9783319361345 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The present work uses numerically exact solutions of the time-dependent many-boson Schrodinger equation to explore the rich physics of the tunneling to open space process in ultracold bosonic particles that are initially prepared as a Bose-Einstein condensate and subsequently allowed to tunnel through a barrier to open space.
Автор: Lining Zhang; Mansun Chan Название: Tunneling Field Effect Transistor Technology ISBN: 3319316516 ISBN-13(EAN): 9783319316512 Издательство: Springer Рейтинг: Цена: 16070.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
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