Описание: The thesis presents experimental and theoretical results about the surface dynamics and the surface Dirac fermion (DF) spectral function of the strong topological insulators Bi2Te3 and Bi2Se3. The experimental results reveal the presence of a strong Kohn anomaly in the measured surface phonon dispersion of a low-lying optical mode, and the absence of surface Rayleigh acoustic phonons. Fitting the experimental data to theoretical models employing phonon Matsubara functions allowed the extraction of the matrix elements of the coupling Hamiltonian and the modifications to the surface phonon propagator that are encoded in the phonon self-energy. This allowed, for the first time, calculation of phonon mode-specific DF coupling ??(q) from experimental data, with average coupling significantly higher than typical values for metals, underscoring the strong coupling between optical surface phonons and surface DFs in topological insulators. Finally, to connect to experimental results obtained from photoemission spectroscopies, an electronic (DF) Matsubara function was constructed using the determined electron-phonon matrix elements and the optical phonon dispersion. This allowed calculation of the DF spectral function and density of states, allowing for comparison with photoemission and scanning tunneling spectroscopies. The results set the necessary energy resolution and extraction methodology for calculating ? from the DF perspective.
Автор: Cary Y. Yang; M.Mahmudur Rahman; Gary L. Harris Название: Amorphous and Crystalline Silicon Carbide IV ISBN: 3642848060 ISBN-13(EAN): 9783642848063 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon carbide and other group IV-IV materials in theiramorphous, microcrystalline, and crystalline forms have awide variety of applications.The contributions to thisvolume report recent developments and trends in the field.
Автор: Marcel Franz Название: Topological Insulators,6 ISBN: 0444633146 ISBN-13(EAN): 9780444633149 Издательство: Elsevier Science Рейтинг: Цена: 23917.00 р. Наличие на складе: Поставка под заказ.
Описание: Describes the revolution in condensed matter physics that occurred in our understanding of crystalline solids. This book chronicles the work done worldwide that led to these discoveries and provides the reader with an overview of the field.
Автор: Atsushi Fujimori; Yoshinori Tokura Название: Spectroscopy of Mott Insulators and Correlated Metals ISBN: 3642633714 ISBN-13(EAN): 9783642633713 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Extensive studies of high-Tc cuprate superconductors have stimualted investigations into various transition-metal oxides. Mott transitions in particular provide fascinating problems and new concepts in condensed matter physics. It deals with the latest developments, with particular emphasis on the theoretical, spectroscopic, and transport aspects.
Автор: J. Tauc Название: Amorphous and Liquid Semiconductors ISBN: 1461587077 ISBN-13(EAN): 9781461587071 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Solid state physics after solving so successfully many fundamental problems in perfect or slightly imperfect crystals, tried in recent years to attack problems associated with large disorder with the aim to understand the consequences of the lack of the long-range order.
Автор: Kugler Название: Amorphous Semiconductors ISBN: 1107019346 ISBN-13(EAN): 9781107019348 Издательство: Cambridge Academ Рейтинг: Цена: 13146.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Explaining how to use computer modelling to better understand the structure and properties of amorphous semiconductors, this book provides readers with the techniques to construct realistic material structures. It is ideal for both physicists and engineers working in solid state physics, semiconductor engineering and electrical engineering.
Автор: Harald Overhof; Peter Thomas Название: Electronic Transport in Hydrogenated Amorphous Semiconductors ISBN: 3662150859 ISBN-13(EAN): 9783662150856 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si: H and a-Ge: H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the boo
Автор: Mikla, Victor V. Название: Trap Level Spectroscopy in Amorphous Semiconductors ISBN: 0323165036 ISBN-13(EAN): 9780323165037 Издательство: Elsevier Science Рейтинг: Цена: 18275.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.
Автор: S. Furukawa Название: Silicon-on-Insulator ISBN: 9401088462 ISBN-13(EAN): 9789401088466 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume contains papers presented during the US-Japan seminar on "Solid Phase Epitaxy and Interface Kinetics" held in Oiso, Japan, June 20-24, 1983.
Автор: Florian Gebhard Название: The Mott Metal-Insulator Transition ISBN: 3642082637 ISBN-13(EAN): 9783642082634 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Little do we reliably know about the Mott transition, and we are far from a complete understanding of the metal --insulator transition due to electr- electron interactions. The Hubbard model describes a Mott transition with a mere minimum of tunable par- eters, and various exact statements and even exact solutions exist in certain limiting cases.
Автор: Florian Gebhard Название: The Mott Metal-Insulator Transition ISBN: 3540614818 ISBN-13(EAN): 9783540614814 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Little do we reliably know about the Mott transition, and we are far from a complete understanding of the metal --insulator transition due to electr- electron interactions. The Hubbard model describes a Mott transition with a mere minimum of tunable par- eters, and various exact statements and even exact solutions exist in certain limiting cases.
Автор: Gary L. Harris; Cary Y.-W. Yang Название: Amorphous and Crystalline Silicon Carbide and Related Materials ISBN: 3642934080 ISBN-13(EAN): 9783642934087 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
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