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Leakage in Nanometer CMOS Technologies, Siva G. Narendra; Anantha P. Chandrakasan


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Автор: Siva G. Narendra; Anantha P. Chandrakasan
Название:  Leakage in Nanometer CMOS Technologies
ISBN: 9781441938268
Издательство: Springer
Классификация:





ISBN-10: 1441938265
Обложка/Формат: Paperback
Страницы: 308
Вес: 0.45 кг.
Дата издания: 25.11.2010
Серия: Integrated Circuits and Systems
Язык: English
Размер: 234 x 156 x 17
Основная тема: Engineering
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: Covers in detail promising solutions at the device, circuit, and architecture levels of abstraction after first explaining the sensitivity of the various MOS leakage sources to these conditions from the first principles.


Near-Field Radiative Heat Transfer Across Nanometer Vacuum GAPS

Автор: Basu Soumyadipta
Название: Near-Field Radiative Heat Transfer Across Nanometer Vacuum GAPS
ISBN: 0323429947 ISBN-13(EAN): 9780323429948
Издательство: Elsevier Science
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Цена: 21054.00 р.
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Описание:

Near-Field Radiative Heat Transfer across Nanometer Vacuum Gaps provides an in-depth description of fundamentals and application of near-field radiative heat transfer. When the vacuum gap between two media is on the order of nanometers, heat transfer can exceed that between blackbodies. This book investigates near-field heat transfer between different materials and geometries highlighting interplay between optics, material thermophysical properties and electromagnetism. The book also highlights the application of near-field thermal radiation in the field of power generation, imaging, and thermal systems as an analog of electronic devices.

Optoelectronic Circuits in Nanometer CMOS Technology

Автор: Mohamed Atef; Horst Zimmermann
Название: Optoelectronic Circuits in Nanometer CMOS Technology
ISBN: 3319273361 ISBN-13(EAN): 9783319273365
Издательство: Springer
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Цена: 15672.00 р.
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Описание: This book describes the newest implementations ofintegrated photodiodes fabricated in nanometer standard CMOS technologies. This book showsthe newest results for the performance of integrated optical receivers, laserdrivers, modulator drivers and optical sensors in nanometer standard CMOStechnologies.

Radio Design in Nanometer Technologies

Автор: Mohammed Ismail; Delia R. de Llera Gonz?lez
Название: Radio Design in Nanometer Technologies
ISBN: 9048172012 ISBN-13(EAN): 9789048172016
Издательство: Springer
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Цена: 16070.00 р.
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Описание:

Radio Design in Nanometer Technologies addresses current trends and future directions in radio design for wireless applications. As radio transceivers constitute the major bottleneck in a wireless chipset in terms of power consumption and die size, the radio must be designed in the context of the entire system, end to end. Therefore the book will address wireless systems as well as the DSP parts before it gets into coverage of radio design issues. To that end, the book contains three parts:

Part 1: a general part discussing current and future wireless networks, chipset evolution over the past decade and ending with a discussion on radio requirements for software defined radio(SDR).

Part 2: will focus on the digital baseband of a wireless chip set, flexible DSP cores for multi-standard wireless platforms and system-on-chip SoC implementation and design flow issues.

Part 3: will be devoted to radio design issues starting at the transceiver level and going down to discuss critical issues facing design of future multi band multi standard radios for emerging wireless standards such as UMTS, WiMaX, MIMO and WLAN in a way that is consistent with the prevailing vision of SDR.

As such, the book is the first volume that looks at the integrated radio design problem as a "piece of a big puzzle," namely the entire chipset or single chip that builds an entire wireless system. This is the only way to successfully design radios to meet the stringent demands of today's increasingly complex wireless systems.

Electromagnetic Information Leakage and Countermeasure Technique

Автор: Taikang Liu; Yongmei Li
Название: Electromagnetic Information Leakage and Countermeasure Technique
ISBN: 9811043515 ISBN-13(EAN): 9789811043512
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book presents a model of electromagnetic (EM) information leakage based on electromagnetic and information theory. It discusses anti-leakage, anti-interception and anti-reconstruction technologies from the perspectives of both computer science and electrical engineering. In the next five years, the threat posed by EM information leakage will only become greater, and the demand for protection will correspondingly increase. The book systematically introduces readers to the theory of EM information leakage and the latest technologies and measures designed to counter it, and puts forward an EM information leakage model that has established the foundation for new research in this area, paving the way for new technologies to counter EM information leakage. As such, it offers a valuable reference guide for all researchers and engineers involved in EM information leakage and countermeasures.

Minimizing and Exploiting Leakage in VLSI Design

Автор: Nikhil Jayakumar; Suganth Paul; Rajesh Garg
Название: Minimizing and Exploiting Leakage in VLSI Design
ISBN: 1489985298 ISBN-13(EAN): 9781489985293
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book presents two techniques to reduce leakage power in digital VLSI ICs. The first reduces leakage through the selective use of high threshold voltage sleep transistors, while the second by applying the optimal Reverse Body Bias voltage.

Analog filters in nanometer cmos

Автор: Uhrmann, Heimo Kolm, Robert Zimmermann, Horst
Название: Analog filters in nanometer cmos
ISBN: 3642380123 ISBN-13(EAN): 9783642380129
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book presents recent results in the development of analog filters in nanometer CMOS. It describes methods for successfully dealing with nanometer devices and includes numerous detailed circuit diagrams and plots of measured results.

Analog IC Reliability in Nanometer CMOS

Автор: Elie Maricau; Georges Gielen
Название: Analog IC Reliability in Nanometer CMOS
ISBN: 1461461626 ISBN-13(EAN): 9781461461623
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.

Comparators in Nanometer CMOS Technology

Автор: Bernhard Goll; Horst Zimmermann
Название: Comparators in Nanometer CMOS Technology
ISBN: 366244481X ISBN-13(EAN): 9783662444818
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties.

Flip-Flop Design in Nanometer CMOS

Автор: Massimo Alioto; Elio Consoli; Gaetano Palumbo
Название: Flip-Flop Design in Nanometer CMOS
ISBN: 3319019961 ISBN-13(EAN): 9783319019963
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book offers a comprehensive treatment of Flip-Flop design, including nanometer effects and the consequent design tradeoffs for current and future VLSI systems. It examines more than 20 topologies, covering all relevant classes of circuits.


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