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Radiation Effects in Semiconductors and Semiconductor Devices, V. S. Vavilov


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Автор: V. S. Vavilov
Название:  Radiation Effects in Semiconductors and Semiconductor Devices
ISBN: 9781468490718
Издательство: Springer
Классификация:
ISBN-10: 1468490710
Обложка/Формат: Paperback
Страницы: 280
Вес: 0.33 кг.
Дата издания: 26.11.2012
Язык: English
Размер: 216 x 140 x 15
Основная тема: Physics
Ссылка на Издательство: Link
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Поставляется из: Германии


Photoelectric Effects In Semiconductors / Foto?lektricheskie Yavlena V Poluprovodnikakh / ????????????????? ??????? ? ?????????????

Автор: Solomon M. Ryvkin
Название: Photoelectric Effects In Semiconductors / Foto?lektricheskie Yavlena V Poluprovodnikakh / ????????????????? ??????? ? ?????????????
ISBN: 146841559X ISBN-13(EAN): 9781468415599
Издательство: Springer
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Цена: 13060.00 р.
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Описание: Investigations of photoelectric effects occupy an important place in studies of semiconductors. In other words the study of steady-state photoconductiv- ity is being replaced by the study of photoconductivity kinetics.

Effects of Radiation on Semiconductors

Автор: Viktor S. Vavilov
Название: Effects of Radiation on Semiconductors
ISBN: 1489927220 ISBN-13(EAN): 9781489927224
Издательство: Springer
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Цена: 13060.00 р.
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Описание: The effects of electromagnetic radiation and high-energy par- ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza- tion, i. e., the generation of excess charge carriers); and(b) dis- turbance of the periodic structure of the crystal, i. e., the forma- tion of structural radiation defects. Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of radiation de- fects is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi- conductors. The same is true of photoelectric and similar phe- nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter- esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob- lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.

Polarization Effects in Semiconductors

Автор: Colin Wood; Debdeep Jena
Название: Polarization Effects in Semiconductors
ISBN: 1441942289 ISBN-13(EAN): 9781441942289
Издательство: Springer
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Цена: 22201.00 р.
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Описание:

This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.

Physical Limitations of Semiconductor Devices

Автор: Vladislav A. Vashchenko; V. F. Sinkevitch
Название: Physical Limitations of Semiconductor Devices
ISBN: 1441945059 ISBN-13(EAN): 9781441945051
Издательство: Springer
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Цена: 18284.00 р.
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Описание: Since the beginning of semiconductor era in microelectronics the methodology of reliability assessment became a well established area. In most cases the reliability assessment involves statistical methods for safe operating area and long term re- ability parameters at the development of semiconductor processes, components and systems. At the same time in case of catastrophic failures at any development phase the major practical method is failure analysis (FA). However FA is mainly dealing with detection of consequences of some irreversible event that already happened. This book is focused on the most important and the less summarized reliability aspects. Among them: catastrophic failures, impact of local structural inhomo- neities, major principles of physical limitation of safe-operating area (SOA), physical mechanisms of the current instability, filamentation and conductivity modulation in particular device types and architectures. Specifically, the similar principles and regularities are discussed for elect- static discharge (ESD) protection devices, treating them as a particular case of pulsed power devices. Thus both the most intriguing applications and reliability problems in case of the discrete and the integrated components are covered in this book.

Devices Based on Low-Dimensional Semiconductor Structures

Автор: M. Balkanski
Название: Devices Based on Low-Dimensional Semiconductor Structures
ISBN: 9401066159 ISBN-13(EAN): 9789401066150
Издательство: Springer
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Цена: 34799.00 р.
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Описание: Proceedings of the NATO Advanced Study Institute, Sozopol, Bulgaria, September 19-30, 1996

Theory of Semiconductor Quantum Devices

Автор: Fausto Rossi
Название: Theory of Semiconductor Quantum Devices
ISBN: 3642266819 ISBN-13(EAN): 9783642266812
Издательство: Springer
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Цена: 22201.00 р.
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Описание: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectric nanodevices, including quantum-cascade laser sources and detectors, few-electron/exiton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.

Particle Penetration and Radiation Effects Volume 2

Автор: Peter Sigmund
Название: Particle Penetration and Radiation Effects Volume 2
ISBN: 3319352512 ISBN-13(EAN): 9783319352510
Издательство: Springer
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Цена: 20896.00 р.
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Описание: This book represents volume 2 of a 3-volume monograph on Particle Penetration and Radiation Effects.

Particle Penetration and Radiation Effects Volume 2

Автор: Peter Sigmund
Название: Particle Penetration and Radiation Effects Volume 2
ISBN: 3319055631 ISBN-13(EAN): 9783319055633
Издательство: Springer
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Цена: 26122.00 р.
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Описание: This book represents volume 2 of a 3-volume monograph on Particle Penetration and Radiation Effects.

Coherent Optical Interactions in Semiconductors

Автор: R.T. Phillips
Название: Coherent Optical Interactions in Semiconductors
ISBN: 1475797508 ISBN-13(EAN): 9781475797503
Издательство: Springer
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Цена: 20962.00 р.
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Описание: Proceedings of a NATO ARW held in Cambridge, United Kingdom, August 11-14, 1993

Ion Implantation in Semiconductors

Автор: Susumu Namba
Название: Ion Implantation in Semiconductors
ISBN: 1468421530 ISBN-13(EAN): 9781468421538
Издательство: Springer
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Цена: 6986.00 р.
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Описание: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974.

Organic Semiconductors and Biopolymers

Автор: Leonid I. Boguslavskii
Название: Organic Semiconductors and Biopolymers
ISBN: 1461586321 ISBN-13(EAN): 9781461586326
Издательство: Springer
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Ion Implantation in Semiconductors 1976

Автор: Fred Chernow
Название: Ion Implantation in Semiconductors 1976
ISBN: 1461341981 ISBN-13(EAN): 9781461341987
Издательство: Springer
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Цена: 12157.00 р.
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Описание: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976.


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