Контакты/Проезд  Доставка и Оплата Помощь/Возврат
История
  +7(495) 980-12-10
  пн-пт: 10-18 сб,вс: 11-18
  shop@logobook.ru
   
    Поиск книг                    Поиск по списку ISBN Расширенный поиск    
Найти
  Зарубежные издательства Российские издательства  
Авторы | Каталог книг | Издательства | Новинки | Учебная литература | Акции | Хиты | |
 

Fundamentals of Power Semiconductor Devices, B. Jayant Baliga


Варианты приобретения
Цена: 22201.00р.
Кол-во:
Наличие: Поставка под заказ.  Есть в наличии на складе поставщика.
Склад Америка: Есть  
При оформлении заказа до: 2025-07-28
Ориентировочная дата поставки: Август-начало Сентября
При условии наличия книги у поставщика.

Добавить в корзину
в Мои желания

Автор: B. Jayant Baliga
Название:  Fundamentals of Power Semiconductor Devices
ISBN: 9781489977656
Издательство: Springer
Классификация:



ISBN-10: 1489977651
Обложка/Формат: Paperback
Страницы: 1069
Вес: 1.50 кг.
Дата издания: 23.08.2016
Язык: English
Размер: 234 x 156 x 55
Основная тема: Engineering
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Германии
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.


Fundamentals of Semiconductor Lasers

Автор: Takahiro Numai
Название: Fundamentals of Semiconductor Lasers
ISBN: 4431551476 ISBN-13(EAN): 9784431551478
Издательство: Springer
Рейтинг:
Цена: 18284.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Fundamentals of power semiconductor devices

Автор: Baliga, B,jayant
Название: Fundamentals of power semiconductor devices
ISBN: 0387473130 ISBN-13(EAN): 9780387473130
Издательство: Springer
Рейтинг:
Цена: 30039.00 р.
Наличие на складе: Поставка под заказ.

Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.

Semiconductor Power Devices

Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman
Название: Semiconductor Power Devices
ISBN: 331970916X ISBN-13(EAN): 9783319709161
Издательство: Springer
Рейтинг:
Цена: 32142.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.

Semiconductor-Laser Fundamentals

Автор: Weng W. Chow; Stephan W. Koch
Название: Semiconductor-Laser Fundamentals
ISBN: 3642083862 ISBN-13(EAN): 9783642083860
Издательство: Springer
Рейтинг:
Цена: 11099.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Since Fall of 1993, when we completed the manuscript of our book "Semi- conductor-Laser Physics" W.W. Chow, S.W. Koch, and M. Sargent III (Springer, Berlin, Heidelberg, 1994)] many new and exciting developments have taken place in the world of semiconductor lasers. Novel laser and ampli- fier structures were developed, and others, for example, the VCSEL (vertical cavity surface emitting laser) and monolithic MOPA (master oscillator power amplifier), made the transition from research and development to production. When investigating some of these systems, we discovered instances when de- vice performance, and thus design depend critically on details of the gain medium properties, e.g., spectral shape and carrier density dependence of the gain and refractive index. New material systems were also introduced, with optical emission wave- lengths spanning from the mid-infrared to the ultraviolet. Particularly note- worthy are laser and light-emitting diodes based on the wide-bandgap group-III nitride and II VI compounds. These devices emit in the visible to ultra-violet wavelength range, which is important for the wide variety of optoelectronic applications. While these novel semiconductor-laser materi- als show many similarities with the more conventional near-infrared systems, they also possess rather different material parameter combinations. These dif- ferences appear as band structure modifications and as increased importance of Coulomb effects, such that, e.g., excitonic signatures resulting from the at- tractive electron-hole interaction are generally significantly more prominent in the wide bandgap systems.

Fundamentals of Semiconductor Processing Technology

Автор: Badih El-Kareh
Название: Fundamentals of Semiconductor Processing Technology
ISBN: 1461359279 ISBN-13(EAN): 9781461359272
Издательство: Springer
Рейтинг:
Цена: 18284.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product.

Fundamentals of III-V Semiconductor MOSFETs

Автор: Serge Oktyabrsky; Peide Ye
Название: Fundamentals of III-V Semiconductor MOSFETs
ISBN: 1489984062 ISBN-13(EAN): 9781489984067
Издательство: Springer
Рейтинг:
Цена: 26120.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.

Fundamentals of Semiconductor Lasers

Автор: Takahiro Numai
Название: Fundamentals of Semiconductor Lasers
ISBN: 1441923519 ISBN-13(EAN): 9781441923516
Издательство: Springer
Рейтинг:
Цена: 16977.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The detailed and comprehensive presentation is unique in that it encourages the reader to consider different semiconductor lasers from different angles.

Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO - Fundamentals

Автор: Yamazaki
Название: Physics and Technology of Crystalline Oxide Semiconductor CAAC-IGZO - Fundamentals
ISBN: 1119247403 ISBN-13(EAN): 9781119247401
Издательство: Wiley
Рейтинг:
Цена: 14090.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium gallium zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current.

Fundamentals of III-V Semiconductor MOSFETs

Автор: Serge Oktyabrsky; Peide Ye
Название: Fundamentals of III-V Semiconductor MOSFETs
ISBN: 144191546X ISBN-13(EAN): 9781441915467
Издательство: Springer
Рейтинг:
Цена: 26122.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.


ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
   В Контакте     В Контакте Мед  Мобильная версия