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Semiconductor Power Devices, Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman


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Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman
Название:  Semiconductor Power Devices
ISBN: 9783319709161
Издательство: Springer
Классификация:





ISBN-10: 331970916X
Обложка/Формат: Hardcover
Страницы: 800
Вес: 1.25 кг.
Дата издания: 28.02.2018
Язык: English
Издание: 2nd ed. 2018
Иллюстрации: 132 illustrations, color; 348 illustrations, black and white; xviii, 708 p. 480 illus., 132 illus. in color.
Размер: 244 x 166 x 52
Читательская аудитория: Professional & vocational
Основная тема: Engineering
Подзаголовок: Physics, Characteristics, Reliability
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Дополнительное описание: Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn-Junctions.- Short Introduction to Power Device Technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- M



Fundamentals of Power Semiconductor Devices

Автор: B. Jayant Baliga
Название: Fundamentals of Power Semiconductor Devices
ISBN: 1489977651 ISBN-13(EAN): 9781489977656
Издательство: Springer
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Цена: 22201.00 р.
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Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.

Fundamentals of power semiconductor devices

Автор: Baliga, B,jayant
Название: Fundamentals of power semiconductor devices
ISBN: 0387473130 ISBN-13(EAN): 9780387473130
Издательство: Springer
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Цена: 30039.00 р.
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Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.

Theory of Semiconductor Quantum Devices

Автор: Fausto Rossi
Название: Theory of Semiconductor Quantum Devices
ISBN: 3642266819 ISBN-13(EAN): 9783642266812
Издательство: Springer
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Цена: 22201.00 р.
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Описание: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectric nanodevices, including quantum-cascade laser sources and detectors, few-electron/exiton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.

Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications

Автор: Saddow Stephen
Название: Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications
ISBN: 012810354X ISBN-13(EAN): 9780128103548
Издательство: Elsevier Science
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Цена: 22844.00 р.
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Описание: Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. . For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. . . This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions.

Photon Absorption Models in Nanostructured Semiconductor Solar Cells and Devices

Автор: Antonio Luque; Alexander Virgil Mellor
Название: Photon Absorption Models in Nanostructured Semiconductor Solar Cells and Devices
ISBN: 3319145371 ISBN-13(EAN): 9783319145372
Издательство: Springer
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Цена: 7182.00 р.
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Описание: Introduction.- Calculations derived of the single band effective mass Equation.- Four band approximation.- Interband optical absorption in quantum well solar cells.- Conclusions.

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Автор: Osamu Ueda; Stephen J. Pearton
Название: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
ISBN: 1493901192 ISBN-13(EAN): 9781493901197
Издательство: Springer
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Цена: 23508.00 р.
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Описание: This book covers reliability procedures for lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Addresses reliability engineering, materials, reliability testing and electronic characterization.

Semiconductor Nanostructures for Optoelectronic Devices

Автор: Gyu-Chul Yi
Название: Semiconductor Nanostructures for Optoelectronic Devices
ISBN: 3642439667 ISBN-13(EAN): 9783642439667
Издательство: Springer
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Цена: 15672.00 р.
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Описание: This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.

Semiconductor Power Devices

Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman
Название: Semiconductor Power Devices
ISBN: 3642423485 ISBN-13(EAN): 9783642423482
Издательство: Springer
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Цена: 19589.00 р.
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Описание: Power Semiconductor Devices - Key Components for Efficient Electrical Energy Conversion Systems.- Semiconductor Properties.- pn - Junctions.- Short introduction to power device technology.- pin-Diodes.- Schottky Diodes.- Bipolar Transistors.- Thyristors.- MOS Transistors.- IGBTs.- Packaging and Reliability of Power Devices.- Destructive Mechanisms in Power Devices.- Power Device Induced Oscillations and Electromagnetic Disturbances.- Power Electronic Systems.- Appendix.- Index.

Semiconductor Devices for Power Conditioning

Автор: P. Roggwiller
Название: Semiconductor Devices for Power Conditioning
ISBN: 1468472658 ISBN-13(EAN): 9781468472653
Издательство: Springer
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Цена: 6986.00 р.
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Описание: The Brown Boveri Symposia are by now part of firmly established tradition. This is the seventh event in a series which was initiated shortly afer Corporate Research was established as a separate entity within our Company; the Symposia are held every other year. The themes to date have been 1969 Flow Research on Blading 1971 Real-Time Control of Electric Power Systems 1973 High-Temperature Materials in Gas Turbines 1975 Nonemissive Electrooptic Displays 1977 Current Interruption in High-Voltage Networks 1979 Surges in High-Voltage Networks 1981 Semiconductor Devices for Power Conditioning Why have we chosen these titles? At the outset we established certain selection criteria; we felt that a subject for a Symposium should fulfill the following require- ments: It should characterize a part of a thoroughly scientific discipline; in other words, it should describe an area of scholarly study and research. It should be of current interest in the sense that important results have recently been obtained and considerable research effort is underway in the international scientific community. It should bear some relation to the scientific and technological acitivity of our Company. Let us look at the requirement "current interest": Some of the topics on the list have been the subject of research for several decades, some even from the beginning of the century. One might wonder, then, why such fields could be regarded as particularly timely in the 1960s and 1970s. A few remarks on this subject therefore are in order.

Physics of semiconductor devices

Автор: Sze, Simon M.
Название: Physics of semiconductor devices
ISBN: 0471143235 ISBN-13(EAN): 9780471143239
Издательство: Wiley
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Цена: 22070.00 р.
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Описание: A textbook and reference in the field of semiconductor devices that reflects the advances in device concepts and performance. It offers engineers, research scientists, faculty, and students a practical basis for understanding the important devices in use.


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