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Materials and Reliability Handbook for Semiconductor Optical and Electron Devices, Osamu Ueda; Stephen J. Pearton


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Цена: 23508.00р.
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Автор: Osamu Ueda; Stephen J. Pearton
Название:  Materials and Reliability Handbook for Semiconductor Optical and Electron Devices
ISBN: 9781493901197
Издательство: Springer
Классификация:






ISBN-10: 1493901192
Обложка/Формат: Paperback
Страницы: 616
Вес: 0.87 кг.
Дата издания: 15.10.2014
Язык: English
Размер: 234 x 156 x 33
Основная тема: Physics
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book covers reliability procedures for lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Addresses reliability engineering, materials, reliability testing and electronic characterization.


Radiation Effects in Advanced Semiconductor Materials and Devices

Автор: C. Claeys; E. Simoen
Название: Radiation Effects in Advanced Semiconductor Materials and Devices
ISBN: 3642077781 ISBN-13(EAN): 9783642077784
Издательство: Springer
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Цена: 30745.00 р.
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Описание: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Optical Semiconductor Devices

Автор: Fukuda
Название: Optical Semiconductor Devices
ISBN: 0471149594 ISBN-13(EAN): 9780471149590
Издательство: Wiley
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Цена: 31672.00 р.
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Описание: This book is devoted to optical semiconductor devices and their numerous applications in telecommunications, optoelectronics, and consumer electronics-areas where signal processing or the transmission of signals across fiber optic cables is paramount.

Electromigration in Thin Films and Electronic Devices: Materials and Reliability

Автор: Kim Choong-Un
Название: Electromigration in Thin Films and Electronic Devices: Materials and Reliability
ISBN: 0081016964 ISBN-13(EAN): 9780081016961
Издательство: Elsevier Science
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Цена: 28739.00 р.
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Описание: Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field.

Semiconductor Devices for Optical Communication

Автор: H. Kressel
Название: Semiconductor Devices for Optical Communication
ISBN: 3540113487 ISBN-13(EAN): 9783540113485
Издательство: Springer
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Цена: 14365.00 р.
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Описание: With contributions by numerous experts

Wide band gap semiconductor nanowires 2

Автор: Consonni Vincent
Название: Wide band gap semiconductor nanowires 2
ISBN: 1848216874 ISBN-13(EAN): 9781848216877
Издательство: Wiley
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Цена: 22010.00 р.
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Описание:

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.

Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.


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