Semiconductor Power Devices, Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman
Автор: Fausto Rossi Название: Theory of Semiconductor Quantum Devices ISBN: 3642266819 ISBN-13(EAN): 9783642266812 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Primary goal of this book is to provide a cohesive description of the vast field of semiconductor quantum devices, with special emphasis on basic quantum-mechanical phenomena governing the electro-optical response of new-generation nanomaterials. The book will cover within a common language different types of optoelectric nanodevices, including quantum-cascade laser sources and detectors, few-electron/exiton quantum devices, and semiconductor-based quantum logic gates. The distinguishing feature of the present volume is a unified microscopic treatment of quantum-transport and coherent-optics phenomena on ultrasmall space- and time-scales, as well as of their semiclassical counterparts.
Описание: Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. . For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. . . This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions.
Описание: Introduction.- Calculations derived of the single band effective mass Equation.- Four band approximation.- Interband optical absorption in quantum well solar cells.- Conclusions.
Автор: Baliga, B,jayant Название: Fundamentals of power semiconductor devices ISBN: 0387473130 ISBN-13(EAN): 9780387473130 Издательство: Springer Рейтинг: Цена: 30039.00 р. Наличие на складе: Поставка под заказ.
Описание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.
Описание: This book covers reliability procedures for lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Addresses reliability engineering, materials, reliability testing and electronic characterization.
Автор: P. Roggwiller Название: Semiconductor Devices for Power Conditioning ISBN: 1468472658 ISBN-13(EAN): 9781468472653 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The Brown Boveri Symposia are by now part of firmly established tradition. This is the seventh event in a series which was initiated shortly afer Corporate Research was established as a separate entity within our Company; the Symposia are held every other year. The themes to date have been 1969 Flow Research on Blading 1971 Real-Time Control of Electric Power Systems 1973 High-Temperature Materials in Gas Turbines 1975 Nonemissive Electrooptic Displays 1977 Current Interruption in High-Voltage Networks 1979 Surges in High-Voltage Networks 1981 Semiconductor Devices for Power Conditioning Why have we chosen these titles? At the outset we established certain selection criteria; we felt that a subject for a Symposium should fulfill the following require- ments: It should characterize a part of a thoroughly scientific discipline; in other words, it should describe an area of scholarly study and research. It should be of current interest in the sense that important results have recently been obtained and considerable research effort is underway in the international scientific community. It should bear some relation to the scientific and technological acitivity of our Company. Let us look at the requirement "current interest": Some of the topics on the list have been the subject of research for several decades, some even from the beginning of the century. One might wonder, then, why such fields could be regarded as particularly timely in the 1960s and 1970s. A few remarks on this subject therefore are in order.
Автор: B. Jayant Baliga Название: Fundamentals of Power Semiconductor Devices ISBN: 1489977651 ISBN-13(EAN): 9781489977656 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown.
Автор: Josef Lutz; Heinrich Schlangenotto; Uwe Scheuerman Название: Semiconductor Power Devices ISBN: 331970916X ISBN-13(EAN): 9783319709161 Издательство: Springer Рейтинг: Цена: 32142.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.
Автор: Sze, Simon M. Название: Physics of semiconductor devices ISBN: 0471143235 ISBN-13(EAN): 9780471143239 Издательство: Wiley Рейтинг: Цена: 22070.00 р. Наличие на складе: Поставка под заказ.
Описание: A textbook and reference in the field of semiconductor devices that reflects the advances in device concepts and performance. It offers engineers, research scientists, faculty, and students a practical basis for understanding the important devices in use.
Автор: Gyu-Chul Yi Название: Semiconductor Nanostructures for Optoelectronic Devices ISBN: 3642439667 ISBN-13(EAN): 9783642439667 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.
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