Fundamentals of III-V Semiconductor MOSFETs, Serge Oktyabrsky; Peide Ye
Автор: Viktor Sverdlov Название: Strain-Induced Effects in Advanced MOSFETs ISBN: 3709119332 ISBN-13(EAN): 9783709119334 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is explored in devices using analytical k.p and numerical pseudopotential methods. Includes a rigorous overview of transport modeling.
Автор: Serge Oktyabrsky; Peide Ye Название: Fundamentals of III-V Semiconductor MOSFETs ISBN: 144191546X ISBN-13(EAN): 9781441915467 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.
Автор: Juin Jei Liou; Adelmo Ortiz-Conde; Francisco Garci Название: Analysis and Design of MOSFETs ISBN: 1461374731 ISBN-13(EAN): 9781461374732 Издательство: Springer Рейтинг: Цена: 22203.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET).
Автор: Juin Jei Liou; Adelmo Ortiz-Conde; Francisco Garci Название: Analysis and Design of MOSFETs ISBN: 0412146010 ISBN-13(EAN): 9780412146015 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET).
Автор: Hisham Haddara Название: Characterization Methods for Submicron MOSFETs ISBN: 0792396952 ISBN-13(EAN): 9780792396956 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.
Описание: To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices.
Автор: Viranjay M. Srivastava; Ghanshyam Singh Название: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch ISBN: 3319011642 ISBN-13(EAN): 9783319011646 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.
Автор: B. Jayant Baliga Название: Advanced Power MOSFET Concepts ISBN: 1489993878 ISBN-13(EAN): 9781489993878 Издательство: Springer Рейтинг: Цена: 32651.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This text offers an in-depth treatment of the physics of operation of advanced power MOSFETs. It provides analytical models for explaining the operation of all advanced power MOSFETs as well as the results of numerical and two-dimensional simulations.
Автор: Viranjay M. Srivastava; Ghanshyam Singh Название: MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch ISBN: 3319345354 ISBN-13(EAN): 9783319345352 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides analysis and discusses the design of various MOSFET technologies. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters as well as testing of MOSFETs parameters using image acquisition.
Автор: Narain D. Arora Название: MOSFET Models for VLSI Circuit Simulation ISBN: 3709192498 ISBN-13(EAN): 9783709192498 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling.
Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.
Автор: Hisham Haddara Название: Characterization Methods for Submicron MOSFETs ISBN: 1461285844 ISBN-13(EAN): 9781461285847 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.
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