Strain-Induced Effects in Advanced MOSFETs, Viktor Sverdlov

Автор: Juin Jei Liou; Adelmo Ortiz-Conde; Francisco Garci
Название: Analysis and Design of MOSFETs
ISBN: 1461374731 ISBN-13(EAN): 9781461374732
Издательство: Springer
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Описание: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET).

Автор: Serge Oktyabrsky; Peide Ye
Название: Fundamentals of III-V Semiconductor MOSFETs
ISBN: 144191546X ISBN-13(EAN): 9781441915467
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.

Автор: Jacopo Franco; Ben Kaczer; Guido Groeseneken
Название: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
ISBN: 9400776624 ISBN-13(EAN): 9789400776623
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

Автор: Serge Oktyabrsky; Peide Ye
Название: Fundamentals of III-V Semiconductor MOSFETs
ISBN: 1489984062 ISBN-13(EAN): 9781489984067
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.

Автор: Juin Jei Liou; Adelmo Ortiz-Conde; Francisco Garci
Название: Analysis and Design of MOSFETs
ISBN: 0412146010 ISBN-13(EAN): 9780412146015
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET).

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 0792396952 ISBN-13(EAN): 9780792396956
Издательство: Springer
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Цена: 23508.00 р.
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Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 1461285844 ISBN-13(EAN): 9781461285847
Издательство: Springer
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Цена: 19589.00 р.
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Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.

Автор: B. Jayant Baliga
Название: Advanced Power MOSFET Concepts
ISBN: 1489993878 ISBN-13(EAN): 9781489993878
Издательство: Springer
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Цена: 32651.00 р.
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Описание: This text offers an in-depth treatment of the physics of operation of advanced power MOSFETs. It provides analytical models for explaining the operation of all advanced power MOSFETs as well as the results of numerical and two-dimensional simulations.

Автор: John Lau
Название: Thermal Stress and Strain in Microelectronics Packaging
ISBN: 1468477692 ISBN-13(EAN): 9781468477696
Издательство: Springer
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Цена: 16979.00 р.
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Описание: Microelectronics packaging and interconnection have experienced exciting growth stimulated by the recognition that systems, not just silicon, provide the solution to evolving applications.

Автор: Wilfried H?nsch
Название: The Drift Diffusion Equation and Its Applications in MOSFET Modeling
ISBN: 3709190975 ISBN-13(EAN): 9783709190975
Издательство: Springer
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Цена: 14365.00 р.
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Описание: To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices.