Analysis and Design of MOSFETs, Juin Jei Liou; Adelmo Ortiz-Conde; Francisco Garci

Автор: Serge Oktyabrsky; Peide Ye
Название: Fundamentals of III-V Semiconductor MOSFETs
ISBN: 144191546X ISBN-13(EAN): 9781441915467
Издательство: Springer
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Цена: 26122.00 р.
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Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.

Автор: Serge Oktyabrsky; Peide Ye
Название: Fundamentals of III-V Semiconductor MOSFETs
ISBN: 1489984062 ISBN-13(EAN): 9781489984067
Издательство: Springer
Рейтинг:
Цена: 26120.00 р.
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Описание: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits.

Автор: Viktor Sverdlov
Название: Strain-Induced Effects in Advanced MOSFETs
ISBN: 3709119332 ISBN-13(EAN): 9783709119334
Издательство: Springer
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Цена: 19589.00 р.
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Описание: This book covers modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is explored in devices using analytical k.p and numerical pseudopotential methods. Includes a rigorous overview of transport modeling.

Автор: Juin Jei Liou; Adelmo Ortiz-Conde; Francisco Garci
Название: Analysis and Design of MOSFETs
ISBN: 1461374731 ISBN-13(EAN): 9781461374732
Издательство: Springer
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Цена: 22203.00 р.
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Описание: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET).

Автор: Jacopo Franco; Ben Kaczer; Guido Groeseneken
Название: Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications
ISBN: 9400776624 ISBN-13(EAN): 9789400776623
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 0792396952 ISBN-13(EAN): 9780792396956
Издательство: Springer
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Цена: 23508.00 р.
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Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 1461285844 ISBN-13(EAN): 9781461285847
Издательство: Springer
Рейтинг:
Цена: 19589.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.