Advances in Markov-Switching Models, James D. Hamilton; Baldev Raj
Автор: Mendelson, Elliot, Название: Schaum`s outline of Boolean algebra and switching circuits ISBN: 0070414602 ISBN-13(EAN): 9780070414600 Издательство: McGraw-Hill Рейтинг: Цена: 986.00 р. Наличие на складе: Есть (2 шт.) Описание: Schaum`s Outlines present all the essential course information in an easy-to-follow, topic-by-topic format. You also get hundreds of examples, solved problems, and practice exercises to test your skills.
Автор: Reynolds Harry Название: JUNOS Enterprise Switching ISBN: 059615397X ISBN-13(EAN): 9780596153977 Издательство: Wiley Рейтинг: Цена: 8869.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Focuses on Juniper Networks` Ethernet-switching EX product platform. This book helps you learn about the hardware and ASIC design prowess of the EX platform, and the JUNOS[registered] Software that powers it. It includes a mix of test cases, case studies, use cases, and tangential answers to real-world problems.
Описание: This book proposes new methods to value equity and model the Markowitz efficient frontier using Markov switching models and provide new evidence and solutions to capture the persistence observed in stock returns across developed and emerging markets.
Автор: Ding-Zhu Du; Hung Q. Ngo Название: Switching Networks: Recent Advances ISBN: 079236953X ISBN-13(EAN): 9780792369530 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Contains various developments in switching networks and applications, including classic topics, such as nonblocking and Benes conjecture, and different directions, such as optical switching networks and applications in VLSI designs. This title provides the advances for researchers in computer networks and applied mathematics.
Автор: Hans-Martin Krolzig Название: Markov-Switching Vector Autoregressions ISBN: 3540630732 ISBN-13(EAN): 9783540630739 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book contributes to re cent developments on the statistical analysis of multiple time series in the presence of regime shifts. This study is intended to provide a systematic and operational ap- proach to the econometric modelling of dynamic systems subject to shifts in regime, based on the Markov-switching vector autoregressive model.
Автор: Sylvia Fr?hwirth-Schnatter Название: Finite Mixture and Markov Switching Models ISBN: 144192194X ISBN-13(EAN): 9781441921949 Издательство: Springer Рейтинг: Цена: 21661.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book is the first to offer a systematic presentation of the Bayesian perspective of finite mixture modeling, showing how finite mixture and Markov switching models are formulated, what structures they imply on the data, their potential uses, and how they are estimated.
Автор: Lammle Todd Название: CCNA Routing and Switching Study Guide ISBN: 1118749618 ISBN-13(EAN): 9781118749616 Издательство: Wiley Рейтинг: Цена: 6334.00 р. Наличие на складе: Поставка под заказ.
Описание: Prepare for the new CCNA exams with this Todd Lammle study guide Cisco author, speaker, and trainer Todd Lammle is considered the authority on all things networking, and his books have sold almost a million copies worldwide.
Автор: Ding-Zhu Du; Hung Q. Ngo Название: Switching Networks: Recent Advances ISBN: 1461379768 ISBN-13(EAN): 9781461379768 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Ouyang Название: Emerging Resistive Switching Memories ISBN: 3319315706 ISBN-13(EAN): 9783319315706 Издательство: Springer Рейтинг: Цена: 7836.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devices.
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