Timing Performance of Nanometer Digital Circuits Under Process Variations, Champac
Автор: J. Bhasker; Rakesh Chadha Название: Static Timing Analysis for Nanometer Designs ISBN: 1441947159 ISBN-13(EAN): 9781441947154 Издательство: Springer Рейтинг: Цена: 22359.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: iming, timing, timing! This book addresses the timing verification using static timing analysis for nanometer designs. The chip designers lack a central reference for information on timing, that covers the basics to the advanced timing veri- cation procedures and techniques.
Автор: Mohamed Atef; Horst Zimmermann Название: Optoelectronic Circuits in Nanometer CMOS Technology ISBN: 3319273361 ISBN-13(EAN): 9783319273365 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book describes the newest implementations ofintegrated photodiodes fabricated in nanometer standard CMOS technologies. This book showsthe newest results for the performance of integrated optical receivers, laserdrivers, modulator drivers and optical sensors in nanometer standard CMOStechnologies.
Описание: This book discusses the digital design of integrated circuits under process variations, with a focus on design-time solutions. The authors describe a step-by-step methodology, going from logic gates to logic paths to the circuit level. Topics are presented in comprehensively, without overwhelming use of analytical formulations. Emphasis is placed on providing digital designers with understanding of the sources of process variations, their impact on circuit performance and tools for improving their designs to comply with product specifications. Various circuit-level “design hints” are highlighted, so that readers can use then to improve their designs. A special treatment is devoted to unique design issues and the impact of process variations on the performance of FinFET based circuits. This book enables readers to make optimal decisions at design time, toward more efficient circuits, with better yield and higher reliability.
Автор: Mohamed Abu Rahma; Mohab Anis Название: Nanometer Variation-Tolerant SRAM ISBN: 1493902202 ISBN-13(EAN): 9781493902200 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This essential reference combines state-of-the-art circuit techniques and statistical methodologies to optimize SRAM performance and yield in nanometer technologies. It shows designers how to apply practical techniques that optimize memory yield.
Автор: Elie Maricau; Georges Gielen Название: Analog IC Reliability in Nanometer CMOS ISBN: 1461461626 ISBN-13(EAN): 9781461461623 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.
Автор: Bernhard Goll; Horst Zimmermann Название: Comparators in Nanometer CMOS Technology ISBN: 366244481X ISBN-13(EAN): 9783662444818 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties.
Автор: Massimo Alioto; Elio Consoli; Gaetano Palumbo Название: Flip-Flop Design in Nanometer CMOS ISBN: 3319019961 ISBN-13(EAN): 9783319019963 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers a comprehensive treatment of Flip-Flop design, including nanometer effects and the consequent design tradeoffs for current and future VLSI systems. It examines more than 20 topologies, covering all relevant classes of circuits.
Автор: Nisar Ahmed Название: Nanometer Technology Designs ISBN: 1441945598 ISBN-13(EAN): 9781441945594 Издательство: Springer Рейтинг: Цена: 21661.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Traditional at-speed test methods cannot guarantee high quality test results as they face many new challenges. Supply noise effects on chip performance, high test pattern volume, small delay defect test pattern generation, high cost of test implementation and application, and utilizing low-cost testers are among these challenges.
Автор: Sheldon Tan; Mehdi Tahoori; Taeyoung Kim; Shengche Название: Long-Term Reliability of Nanometer VLSI Systems ISBN: 3030261719 ISBN-13(EAN): 9783030261719 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.
Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.
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