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Long-Term Reliability of Nanometer VLSI Systems, Sheldon Tan; Mehdi Tahoori; Taeyoung Kim; Shengche


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Автор: Sheldon Tan; Mehdi Tahoori; Taeyoung Kim; Shengche
Название:  Long-Term Reliability of Nanometer VLSI Systems
ISBN: 9783030261719
Издательство: Springer
Классификация:



ISBN-10: 3030261719
Обложка/Формат: Hardcover
Страницы: 460
Вес: 0.92 кг.
Дата издания: 2019
Язык: English
Издание: 1st ed. 2019
Иллюстрации: 195 illustrations, color; 16 illustrations, black and white; xli, 460 p. 211 illus., 195 illus. in color.
Размер: 234 x 156 x 27
Читательская аудитория: Professional & vocational
Основная тема: Physics
Подзаголовок: Modeling, Analysis and Optimization
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.
Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

Дополнительное описание: Part I. New physics-based EM analysis and system-level dynamic reliability management.- Chapter 1. Introduction.- Chapter 2. Physics Based EM Modeling.- Chapter 3. Fast EM Stress Evolution Analysis Using Krylov Subspace Method.- Chapter 4. Fast EM Immorta



Analog filters in nanometer cmos

Автор: Uhrmann, Heimo Kolm, Robert Zimmermann, Horst
Название: Analog filters in nanometer cmos
ISBN: 3642380123 ISBN-13(EAN): 9783642380129
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book presents recent results in the development of analog filters in nanometer CMOS. It describes methods for successfully dealing with nanometer devices and includes numerous detailed circuit diagrams and plots of measured results.

Analog IC Reliability in Nanometer CMOS

Автор: Elie Maricau; Georges Gielen
Название: Analog IC Reliability in Nanometer CMOS
ISBN: 1461461626 ISBN-13(EAN): 9781461461623
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.

Analog IC Reliability in Nanometer CMOS

Автор: Elie Maricau; Georges Gielen
Название: Analog IC Reliability in Nanometer CMOS
ISBN: 1489986308 ISBN-13(EAN): 9781489986306
Издательство: Springer
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Цена: 15672.00 р.
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Описание: This book covers modeling, simulation and analysis of analog circuit aging, nanometer CMOS physical effects resulting in unreliability, transistor aging compact models for circuit simulation, methods for efficient circuit reliability simulation and more.

Near-Field Radiative Heat Transfer Across Nanometer Vacuum GAPS

Автор: Basu Soumyadipta
Название: Near-Field Radiative Heat Transfer Across Nanometer Vacuum GAPS
ISBN: 0323429947 ISBN-13(EAN): 9780323429948
Издательство: Elsevier Science
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Цена: 21054.00 р.
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Описание:

Near-Field Radiative Heat Transfer across Nanometer Vacuum Gaps provides an in-depth description of fundamentals and application of near-field radiative heat transfer. When the vacuum gap between two media is on the order of nanometers, heat transfer can exceed that between blackbodies. This book investigates near-field heat transfer between different materials and geometries highlighting interplay between optics, material thermophysical properties and electromagnetism. The book also highlights the application of near-field thermal radiation in the field of power generation, imaging, and thermal systems as an analog of electronic devices.

Flip-Flop Design in Nanometer CMOS

Автор: Massimo Alioto; Elio Consoli; Gaetano Palumbo
Название: Flip-Flop Design in Nanometer CMOS
ISBN: 3319019961 ISBN-13(EAN): 9783319019963
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book offers a comprehensive treatment of Flip-Flop design, including nanometer effects and the consequent design tradeoffs for current and future VLSI systems. It examines more than 20 topologies, covering all relevant classes of circuits.

Chemical, Structural and Electronic Analysis of Heterogeneous Surfaces on Nanometer Scale

Автор: R. Rosei
Название: Chemical, Structural and Electronic Analysis of Heterogeneous Surfaces on Nanometer Scale
ISBN: 9401064148 ISBN-13(EAN): 9789401064149
Издательство: Springer
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Цена: 6986.00 р.
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Описание: Proceedings of the NATO Advanced Research Workshop, Trieste, Italy, 24-26 April 1995

Timing Performance of Nanometer Digital Circuits Under Process Variations

Автор: Champac
Название: Timing Performance of Nanometer Digital Circuits Under Process Variations
ISBN: 3319754645 ISBN-13(EAN): 9783319754642
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book discusses the digital design of integrated circuits under process variations, with a focus on design-time solutions. Emphasis is placed on providing digital designers with understanding of the sources of process variations, their impact on circuit performance and tools for improving their designs to comply with product specifications.

Nanometer Technology Designs

Автор: Nisar Ahmed
Название: Nanometer Technology Designs
ISBN: 1441945598 ISBN-13(EAN): 9781441945594
Издательство: Springer
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Цена: 21661.00 р.
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Описание: Traditional at-speed test methods cannot guarantee high quality test results as they face many new challenges. Supply noise effects on chip performance, high test pattern volume, small delay defect test pattern generation, high cost of test implementation and application, and utilizing low-cost testers are among these challenges.

Comparators in Nanometer CMOS Technology

Автор: Bernhard Goll; Horst Zimmermann
Название: Comparators in Nanometer CMOS Technology
ISBN: 366244481X ISBN-13(EAN): 9783662444818
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book covers the complete spectrum of the fundamentals of clocked, regenerative comparators, their state-of-the-art, advanced CMOS technologies, innovative comparators inclusive circuit aspects, their characterization and properties.

Atomic and Nanometer-Scale Modification of Materials

Автор: P. Avouris
Название: Atomic and Nanometer-Scale Modification of Materials
ISBN: 9401048959 ISBN-13(EAN): 9789401048958
Издательство: Springer
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Цена: 12157.00 р.
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Описание: This volume contains the proceedings of the conference on "Atomic and Nanometer Scale Modification of Materials: Fundamentals and Applications" which was co-sponsored by NATO and the Engineering Foundation, and took place in Ventura, California in August 1992.


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