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Nanoscale Silicon Devices, 


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Название:  Nanoscale Silicon Devices
ISBN: 9781138749320
Издательство: Taylor&Francis
Классификация:


ISBN-10: 113874932X
Обложка/Формат: Paperback
Вес: 0.57 кг.
Дата издания: 27.07.2017
Язык: English
Размер: 234 x 156
Читательская аудитория: Tertiary education (us: college)
Ключевые слова: Optical physics, TECHNOLOGY & ENGINEERING / Electronics / Microelectronics,TECHNOLOGY & ENGINEERING / Lasers & Photonics,TECHNOLOGY & ENGINEERING / Nanotechnology & MEMS
Основная тема: Optics & optoelectronics
Ссылка на Издательство: Link
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Поставляется из: Европейский союз
Описание: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.


Автор: Horowitz Paul
Название: The art of electronics The x Chapters
ISBN: 1108499945 ISBN-13(EAN): 9781108499941
Издательство: Cambridge Academ
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Цена: 8870.00 р.
Наличие на складе: Заказано в издательстве.

Описание: The x-Chapters is the missing pieces of The Art of Electronics, to be used either as its complement, or as a direct route to exploring some of the most exciting and oft-overlooked topics in advanced electronic engineering. Students, researchers and practitioners will find here techniques and circuits that are unavailable elsewhere.

Nanoscale Electronic Devices and Their Applications

Автор: Shah, Khurshed Ahmad , Khanday, Farooq Ahmad
Название: Nanoscale Electronic Devices and Their Applications
ISBN: 0367407078 ISBN-13(EAN): 9780367407070
Издательство: Taylor&Francis
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Цена: 11023.00 р.
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Описание: This book helps to acquire thorough understanding of the basics of solids at nanoscale besides their applications including operation and properties of recent nanoscale devices covering carbon nanotube devices and their applications, doping techniques, construction and operation details of channel Engineered MOSFETs and spin devices.

Functionalized Nanoscale Materials, Devices and Systems

Автор: Ashok K. Vaseashta; Ion N. Mihailescu
Название: Functionalized Nanoscale Materials, Devices and Systems
ISBN: 1402089023 ISBN-13(EAN): 9781402089022
Издательство: Springer
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Цена: 19564.00 р.
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Описание: Describes the underlying principles, synthesis routes, characterizations, applications of Nanoscale materials. This book discusses several top-down (attrition) and bottoms-up (self-assembly) approaches to prepare nanomaterials. It is suitable for those considering careers in the field of nanostructured materials and nanotechnology.

Frontiers in Nanoscale Science of Micron/Submicron Devices

Автор: A.-P. Jauho; Eugenia V. Buzaneva
Название: Frontiers in Nanoscale Science of Micron/Submicron Devices
ISBN: 0792343018 ISBN-13(EAN): 9780792343011
Издательство: Springer
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Цена: 51290.00 р.
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Описание: The topics covered in this book can be divided into the following main categories: basic science, device modelling, technology and materials science, characterization, and new structures. This book is useful to both the interested graduate student and the seasoned professional to gain an idea of the way nanoscience is developing.

Nanoscale Devices

Автор: Gianfranco Cerofolini
Название: Nanoscale Devices
ISBN: 3642260233 ISBN-13(EAN): 9783642260230
Издательство: Springer
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Цена: 13974.00 р.
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Описание: The evolution of the microelectronics is controlled by the idea of scaling. This book deals with the miniaturization of electronic devices towards the nanoscale. It is intended to be self-contained providing in appendices the necessary side knowledge.

Frontiers in Nanoscale Science of Micron/Submicron Devices

Автор: A.-P. Jauho; Eugenia V. Buzaneva
Название: Frontiers in Nanoscale Science of Micron/Submicron Devices
ISBN: 9401072949 ISBN-13(EAN): 9789401072946
Издательство: Springer
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Цена: 51290.00 р.
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Описание: Proceedings of the NATO Advanced Study Institute, Kiev, Ukraine, August 16-26, 1995

Monolithic Nanoscale Photonics-Electronics Integration in Silicon

Автор: Henry Radamson
Название: Monolithic Nanoscale Photonics-Electronics Integration in Silicon
ISBN: 0124199755 ISBN-13(EAN): 9780124199750
Издательство: Elsevier Science
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Цена: 7409.00 р.
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Описание: Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. This book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments.

Neuromorphic Circuits for Nanoscale Devices

Автор: Pinaki Mazumder; Yalcin Yilmaz
Название: Neuromorphic Circuits for Nanoscale Devices
ISBN: 8770220603 ISBN-13(EAN): 9788770220606
Издательство: Taylor&Francis
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Цена: 14851.00 р.
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Описание:

Nanoscale devices attracted significant research effort from the industry and academia due to their operation principals being based on different physical properties which provide advantages in the design of certain classes of circuits over conventional CMOS transistors.

Neuromorphic Circuits for Nanoscale Devices contains recent research papers presented in various international conferences and journals to provide insight into how the operational principles of the nanoscale devices can be utilized for the design of neuromorphic circuits for various applications of non-volatile memory, neural network training/learning, and image processing.

Table of Content:

Introduction; 1. Crossbar Memory Simulation and Performance Evaluation; 2. Memristor Digital Memory; 3. Multi-Level Memory Architecture; 4. Neuromorphic Building Blocks with Memristors; 5. Value Iteration with Memristors; 6. 2-D Array of Multi-Peak Resonant Tunneling Diodes Based Color Image Processing; 7. Color Image Processing with Multi-Peak Resonant Tunneling Diodes; 8. Design of a Velocity-Tuned Filter Using a Matrix of Resonant Tunneling Diodes; 9. Image Processing by a Programmable Artificial Retina Comprising Quantum Dots

MEMS Silicon Oscillating Accelerometers and Readout Circuits

Автор: Yong Ping Xu
Название: MEMS Silicon Oscillating Accelerometers and Readout Circuits
ISBN: 877022045X ISBN-13(EAN): 9788770220453
Издательство: Taylor&Francis
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Цена: 14086.00 р.
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Описание: Most MEMS accelerometers on the market today are capacitive accelerometers that are based on the displacement sensing mechanism. This book is intended to cover recent developments of MEMS silicon oscillating accelerometers (SOA), also referred to as MEMS resonant accelerometer. As contrast to the capacitive accelerometer, the MEMS SOA is based on the force sensing mechanism, where the input acceleration is converted to a frequency output. MEMS Silicon Oscillating Accelerometers and Readout Circuits consists of six chapters and covers both MEMS sensor and readout circuit, and provides an in-depth coverage on the design and modelling of the MEMS SOA with several recently reported prototypes. The book is not only useful to researchers and engineers who are familiar with the topic, but also appeals to those who have general interests in MEMS inertial sensors. The book includes extensive references that provide further information on this topic.


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