Frontiers in Nanoscale Science of Micron/Submicron Devices, A.-P. Jauho; Eugenia V. Buzaneva

Автор: A.-P. Jauho; Eugenia V. Buzaneva
Название: Frontiers in Nanoscale Science of Micron/Submicron Devices
ISBN: 0792343018 ISBN-13(EAN): 9780792343011
Издательство: Springer
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Цена: 51290.00 р.
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Описание: The topics covered in this book can be divided into the following main categories: basic science, device modelling, technology and materials science, characterization, and new structures. This book is useful to both the interested graduate student and the seasoned professional to gain an idea of the way nanoscience is developing.

Автор: Amir Zjajo
Название: Stochastic Process Variation in Deep-Submicron CMOS
ISBN: 9400777809 ISBN-13(EAN): 9789400777804
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book features a unique combination of mathematical treatment of random process variation, electrical noise and temperature, and circuit realizations for on-chip monitoring and performance calibration. Includes examples and easy to follow procedures.

Автор: Helmut Heinrich; G?nther Neubauer; Friedemar Kucha
Название: Physics and Technology of Submicron Structures
ISBN: 3642834337 ISBN-13(EAN): 9783642834332
Издательство: Springer
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Цена: 16769.00 р.
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Описание: The topics treated range from the fabrication of microstructures and the physical background of future semiconductor devices to vertical transport in nanostructures, universal conductance fluctuations, and the transition from two-dimensional to one-dimensional conduction in semiconductor structures.

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 1461285844 ISBN-13(EAN): 9781461285847
Издательство: Springer
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Цена: 19589.00 р.
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Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.

Автор: Fisher Timothy S
Название: Thermal Energy at the Nanoscale
ISBN: 9814449784 ISBN-13(EAN): 9789814449786
Издательство: World Scientific Publishing
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Цена: 5069.00 р.
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Описание: These lecture notes provide a detailed treatment of the thermal energy storage and transport by conduction in natural and fabricated structures. Thermal energy in two carriers, i.e. phonons and electrons -- are explored from first principles. For solid-state transport, a common Landauer framework is used for heat flow. Issues including the quantum of thermal conductance, ballistic interface resistance, and carrier scattering are elucidated. Bulk material properties, such as thermal and electrical conductivity, are derived from particle transport theories, and the effects of spatial confinement on these properties are established.

Автор: Gianfranco Cerofolini
Название: Nanoscale Devices
ISBN: 3642260233 ISBN-13(EAN): 9783642260230
Издательство: Springer
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Цена: 13974.00 р.
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Описание: The evolution of the microelectronics is controlled by the idea of scaling. This book deals with the miniaturization of electronic devices towards the nanoscale. It is intended to be self-contained providing in appendices the necessary side knowledge.

Автор: Harold L. Grubin; David K. Ferry; C. Jacoboni
Название: The Physics of Submicron Semiconductor Devices
ISBN: 1489923845 ISBN-13(EAN): 9781489923844
Издательство: Springer
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Цена: 27950.00 р.
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Описание: ... ...... . . . . . . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . .

Автор: David K. Ferry; Robert O. Grondin
Название: Physics of Submicron Devices
ISBN: 1461364442 ISBN-13(EAN): 9781461364443
Издательство: Springer
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Цена: 15672.00 р.
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Описание: First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices.

Автор: Kamil A. Valiev
Название: The Physics of Submicron Lithography
ISBN: 1461364612 ISBN-13(EAN): 9781461364610
Издательство: Springer
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Цена: 27950.00 р.
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Описание: In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer.

Автор: Paolo Bettotti
Название: Submicron Porous Materials
ISBN: 331953033X ISBN-13(EAN): 9783319530338
Издательство: Springer
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Цена: 20962.00 р.
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Описание: This book covers the latest research on porous materials at the submicron scale and inspires readers to better understand the porosity of materials, as well as to develop innovative new materials.

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 0792396952 ISBN-13(EAN): 9780792396956
Издательство: Springer
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Цена: 23508.00 р.
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Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.

Автор: Wim Magnus; Wim Schoenmaker
Название: Quantum Transport in Submicron Devices
ISBN: 3642628087 ISBN-13(EAN): 9783642628085
Издательство: Springer
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Цена: 13974.00 р.
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Описание: The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices.