Stochastic Process Variation in Deep-Submicron CMOS, Amir Zjajo

Автор: W. Nebel; Jean Mermet
Название: Low Power Design in Deep Submicron Electronics
ISBN: 0792381033 ISBN-13(EAN): 9780792381037
Издательство: Springer
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Описание: Presents the different aspects of low power design for deep submicron electronics at various levels of abstraction from system level to circuit level and technology. This book aims to guide industrial and academic engineers and researchers in the selection of methods, technologies and tools and to provide a baseline for further developments.

Автор: Wim Magnus; Wim Schoenmaker
Название: Quantum Transport in Submicron Devices
ISBN: 3642628087 ISBN-13(EAN): 9783642628085
Издательство: Springer
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Описание: The aim of this book is to resolve the problem of electron and hole transport with a coherent and consistent theory that is relevant to the understanding of transport phenomena in submicron devices.

Автор: Helmut Heinrich; G?nther Neubauer; Friedemar Kucha
Название: Physics and Technology of Submicron Structures
ISBN: 3642834337 ISBN-13(EAN): 9783642834332
Издательство: Springer
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Цена: 16769.00 р.
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Описание: The topics treated range from the fabrication of microstructures and the physical background of future semiconductor devices to vertical transport in nanostructures, universal conductance fluctuations, and the transition from two-dimensional to one-dimensional conduction in semiconductor structures.

Автор: A.-P. Jauho; Eugenia V. Buzaneva
Название: Frontiers in Nanoscale Science of Micron/Submicron Devices
ISBN: 9401072949 ISBN-13(EAN): 9789401072946
Издательство: Springer
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Цена: 51290.00 р.
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Описание: Proceedings of the NATO Advanced Study Institute, Kiev, Ukraine, August 16-26, 1995

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 1461285844 ISBN-13(EAN): 9781461285847
Издательство: Springer
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Цена: 19589.00 р.
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Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.

Автор: A.-P. Jauho; Eugenia V. Buzaneva
Название: Frontiers in Nanoscale Science of Micron/Submicron Devices
ISBN: 0792343018 ISBN-13(EAN): 9780792343011
Издательство: Springer
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Цена: 51290.00 р.
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Описание: The topics covered in this book can be divided into the following main categories: basic science, device modelling, technology and materials science, characterization, and new structures. This book is useful to both the interested graduate student and the seasoned professional to gain an idea of the way nanoscience is developing.

Автор: Amir Zjajo
Название: Stochastic Process Variation in Deep-Submicron CMOS
ISBN: 9400777809 ISBN-13(EAN): 9789400777804
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book features a unique combination of mathematical treatment of random process variation, electrical noise and temperature, and circuit realizations for on-chip monitoring and performance calibration. Includes examples and easy to follow procedures.

Автор: Harold L. Grubin; David K. Ferry; C. Jacoboni
Название: The Physics of Submicron Semiconductor Devices
ISBN: 1489923845 ISBN-13(EAN): 9781489923844
Издательство: Springer
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Цена: 27950.00 р.
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Описание: ... ...... . . . . . . . . . . ... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . .

Автор: Kamil A. Valiev
Название: The Physics of Submicron Lithography
ISBN: 1461364612 ISBN-13(EAN): 9781461364610
Издательство: Springer
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Цена: 27950.00 р.
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Описание: In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer.

Автор: Hisham Haddara
Название: Characterization Methods for Submicron MOSFETs
ISBN: 0792396952 ISBN-13(EAN): 9780792396956
Издательство: Springer
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Цена: 23508.00 р.
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Описание: The need for more deep and extensive characterization of MOSFET param- eters has further increased as the applications of this device have gained ground in many new fields in which its performance has become more and more sensi- tive to the properties of its Si - Si0 interface.

Автор: David K. Ferry; Robert O. Grondin
Название: Physics of Submicron Devices
ISBN: 1461364442 ISBN-13(EAN): 9781461364443
Издательство: Springer
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Цена: 15672.00 р.
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Описание: First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices.