Описание: Written from the perspective of an experimental chemist, this book puts together some fundamentals from chemistry, solid state physics and quantum chemistry, to help with understanding and predicting the electronic and optical properties of organic semiconductors, both polymers and small molecules.
Автор: S. Luryi; B.I. Shklovskii; A.L. Efros Название: Electronic Properties of Doped Semiconductors ISBN: 3662024055 ISBN-13(EAN): 9783662024058 Издательство: Springer Рейтинг: Цена: 12577.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: First-generation semiconductors could not be properly termed "doped- they were simply very impure. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.
Автор: Marvin L. Cohen; James R. Chelikowsky Название: Electronic Structure and Optical Properties of Semiconductors ISBN: 3540513914 ISBN-13(EAN): 9783540513919 Издательство: Springer Рейтинг: Цена: 9141.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: We began planning and writing this book in thc late 1970$ at thc ugge s stion of Manuel Cardona and Helmut Latsch. We also received considerable eo- couragement and stimulation from colleagues. Same said there was a need for instructional material in tbis area while others emphasized thc utility of a research text. We tried to strike a compromise. Thc figures, tables, and rcferences are included to enable researchcrs to obt81o quickly essential information in this area of semiconductor research. For instructoTS and stu- dents, we attempt to cover same basic ideas abaut electronic structure and semiconductor physics with applications to real, rather than model, solids. Ve \Vish to thank our colleagues and collaborators whose research rc- sults and ideas are presented here. Special thanks are duc to Jim Phillips who illfluellced lIS hoth during ollr formative )'ears and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manucl Cardona. llerkeley, CA M.L. Gehen - inncapolis, MN, J.R, Chelikew"ky March 1988 VII Contents 1. Introduction 1 2. Theoretical Concepts and Methods .................... . 4 2.1 Thc One-Electron Model and Band Structure 7 2.2 Properties cf En(k) ......................... . 11 3. Pseudopotentials 16 3.1 The Empirical Pseudopotential Method .......... 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ...... ..... 25 4. Response Functiolls and Density of States . ..
Описание: Based on new multiscale simulation protocols, the book studies the complex interplay between molecular architecture, supramolecular organization and electronic structure in order to reveal why some materials perform well - and why others do not.
Описание: The research done in this field will help to widen the scope of semi- conductor applications by finding novel ways of employing surface effects in the construct ion of mi croe 1 ectroni c devi ces, semi conductor gas ana lysers, solar cells, etc.
Автор: G.W. Cullen; V.S. Ban; C.C. Wang; S. Berkman; J. B Название: Heteroepitaxial Semiconductors for Electronic Devices ISBN: 1461262690 ISBN-13(EAN): 9781461262695 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Harald Overhof; Peter Thomas Название: Electronic Transport in Hydrogenated Amorphous Semiconductors ISBN: 3662150859 ISBN-13(EAN): 9783662150856 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si: H and a-Ge: H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the boo
Описание: Computational Electrodynamics is a vast research field with a wide variety of tools. In physics the principle of gauge invariance plays a pivotal role as a guide towards a sensible formulation of the laws of nature as well as computing the properties of elementary particles using the lattice formulation of gauge theories, yet the gauge principle has played a much less pronounced role in performing computation in classical electrodynamics. In this work the author will demonstrate that starting from the gauge formulation of electrodynamics using the electromagnetic potentials leads to computational tools that can very well compete with the conventional electromagnetic field-based tools. Once accepting the formulation based on gauge fields, the computational code is very transparent due to the mimetic mapping of the electrodynamic variables on the computational grid. Although the illustrations and applications originate from microelectronic engineering, the method has a much larger range of applicability. Therefore this book is of interest to everyone having interest in computational electrodynamics. The volume is organized as follows: In part 1, a detailed introduction and overview is presented of the Maxwell equations as well as the derivation of the current and charge densities is different materials. Semiconductors are responding to electromagnetic fields in a non-linear way and the induced complications are discussed in detail. In part 2, the transition of the theory of electrodynamics, using the gauge potentials, to a formulation that can serve as the gateway to computational code is presented. In part 3, the feasibility and success of the methods of part 2 are demonstrated by a collection of microelectronic device designs. Part 4 focuses on a set of topical themes that brings the reader to the frontier of research in building the simulation tools using the gauge principle in computational electrodynamics.Technical topics discussed in the book include:Electromagnetic Field EquationsConstitutive RelationsDiscretization and Numerical AnalysisFinite Element and Finite Volume MethodsDesign of Integrated Passive Components.
Автор: Ron Naaman; Zeev Vager Название: The Structure of Small Molecules and Ions ISBN: 146847426X ISBN-13(EAN): 9781468474268 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The workshop on "The structure of small molecules and ions" was held at the Neve-Han guest house, near Jerusalem, Israel on December 13 to 18 in mem- ory of the late Professor Itzhak Plesser.
Автор: S.J.L. Billinge; M.F. Thorpe Название: From Semiconductors to Proteins: Beyond the Average Structure ISBN: 1461351588 ISBN-13(EAN): 9781461351580 Издательство: Springer Рейтинг: Цена: 20962.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This series of books, which is published at the rate of about one per year, addresses fundamental problems in materials science.
Автор: Walter P?tz; W. Andreas Schroeder Название: Coherent Control in Atoms, Molecules, and Semiconductors ISBN: 9401059322 ISBN-13(EAN): 9789401059329 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the International Workshop held in Chicago, USA, 19-22 May 1998
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