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Advances in Silicon Solar Cells, Shadia Ikhmayies


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Цена: 20962.00р.
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Автор: Shadia Ikhmayies
Название:  Advances in Silicon Solar Cells
ISBN: 9783319888255
Издательство: Springer
Классификация:




ISBN-10: 3319888250
Обложка/Формат: Soft cover
Страницы: 338
Вес: 0.53 кг.
Дата издания: 2019
Язык: English
Издание: Softcover reprint of
Иллюстрации: 100 tables, color; 181 illustrations, color; 21 illustrations, black and white; vi, 338 p. 202 illus., 181 illus. in color.
Размер: 234 x 156 x 18
Читательская аудитория: Professional & vocational
Ключевые слова: Energy Materials
Основная тема: Materials Science
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book provides a review of all types of silicon solar cells. The scope includes monocrocrystalline Si solar cells, polycrystalline and amorphous thin-film silicon solar cells, and tandem solar cells. Production, treatment and development of these devices are reviewed. Limitations of these devices, design optimization, testing and fabrication methods are covered. In addition, current status and future prospects for the further development of silicon solar cells are addressed. Special emphasis is given to methods of attaining high efficiency and thereby cost-effective solar power. The aim of the book is to provide the reader with a complete overview about the recent advances in the structure and technology of all generations of silicon solar cells. 
Дополнительное описание: First generation silicon solar cells.- Wafer based silicon solar cells.- Ribbon Silicon Cells.- Second generation silicon solar cells.- Polycrystalline (p-Si) silicon thin film solar cells.- Amorphous silicon (a-Si) thin film solar cells.- Third generatio



Crystal Growth of Silicon for Solar Cells

Автор: Kazuo Nakajima; Noritaka Usami
Название: Crystal Growth of Silicon for Solar Cells
ISBN: 3642260756 ISBN-13(EAN): 9783642260759
Издательство: Springer
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Цена: 20962.00 р.
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Описание: This volume presents a comprehensive survey of the science and technology of crystal growth of Si for solar cells with emphasis on fundamental science. It includes numerous illustrations that help promote comprehension of crystal-growth physics.

Advances in Silicon Solar Cells

Автор: Shadia Ikhmayies
Название: Advances in Silicon Solar Cells
ISBN: 3319697021 ISBN-13(EAN): 9783319697024
Издательство: Springer
Рейтинг:
Цена: 22359.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book provides a review of all types of silicon solar cells. The scope includes monocrocrystalline Si solar cells, polycrystalline and amorphous thin-film silicon solar cells, and tandem solar cells. Production, treatment and development of these devices are reviewed. Limitations of these devices, design optimization, testing and fabrication methods are covered. In addition, current status and future prospects for the further development of silicon solar cells are addressed. Special emphasis is given to methods of attaining high efficiency and thereby cost-effective solar power. The aim of the book is to provide the reader with a complete overview about the recent advances in the structure and technology of all generations of silicon solar cells. 

Surface passivation of industrial crystalline silicon solar cells

Название: Surface passivation of industrial crystalline silicon solar cells
ISBN: 1785612468 ISBN-13(EAN): 9781785612466
Издательство: Неизвестно
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Цена: 24944.00 р.
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Описание: This timely, comprehensive work on solar cell surface passivation will collect and convey the scientific and technological progress provided by universities, research institutes and companies to implement dielectric passivation layers into the solar cell manufacturing process for c-Si solar cells.

Advances in Thin-Film Solar Cells

Автор: Dharmadasa
Название: Advances in Thin-Film Solar Cells
ISBN: 9814800120 ISBN-13(EAN): 9789814800129
Издательство: Taylor&Francis
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Цена: 17762.00 р.
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Описание: This book concentrates on the latest developments and attempts to improve our understanding of solid-state device physics. The material presented is mainly experimental and based on CdTe thin-film solar cells. The author extends these new findings to CIGS thin-film solar cells.

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

Автор: Wilfried G. J. H. M. van Sark; Lars Korte; Frances
Название: Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells
ISBN: 3642270077 ISBN-13(EAN): 9783642270079
Издательство: Springer
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Цена: 28732.00 р.
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Описание: Written for all experts in this field, this book presents an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells.

Crystalline Silicon Solar Cells

Автор: Goetzberger
Название: Crystalline Silicon Solar Cells
ISBN: 0471971448 ISBN-13(EAN): 9780471971443
Издательство: Wiley
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Цена: 29454.00 р.
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Описание: As environmental concerns escalate, solar power is increasingly seen as an attractive alternative energy source. Crystalline Silicon Solar Cells addresses the practical and theoretical issues fundamental to the viable conversion of sunlight into electricity.

Diffractive Optics for Thin-Film Silicon Solar Cells

Автор: Schuster
Название: Diffractive Optics for Thin-Film Silicon Solar Cells
ISBN: 3319442775 ISBN-13(EAN): 9783319442778
Издательство: Springer
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Цена: 15372.00 р.
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Описание:

This thesis introduces a figure of merit for light trapping with photonic nanostructures and shows how different light trapping methods compare, irrespective of material, absorber thickness or type of nanostructure. It provides an overview of the essential aspects of light trapping, offering a solid basis for future designs.
Light trapping with photonic nanostructures is a powerful method of increasing the absorption in thin film solar cells. Many light trapping methods have been studied, but to date there has been no comprehensive figure of merit to compare these different methods quantitatively. This comparison allows us to establish important design rules for highly performing structures; one such rule is the structuring of the absorber layer from both sides, for which the authors introduce a novel and simple layer-transfer technique. A closely related issue is the question of plasmonic vs. dielectric nanostructures; the authors present an experimental demonstration, aided by a detailed theoretical assessment, highlighting the importance of considering the multipass nature of light trapping in a thin film, which is an essential effect that has been neglected in previous work and which allows us to quantify the parasitic losses.
Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells

Автор: Wolfgang Rainer Fahrner
Название: Amorphous Silicon / Crystalline Silicon Heterojunction Solar Cells
ISBN: 3642370381 ISBN-13(EAN): 9783642370380
Издательство: Springer
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Цена: 6986.00 р.
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Описание:

Introduction.- Useful material parameters.- Manufacturing.- Concepts.- Problems and challenges.- Measurement techniques.- Simulation.- Long term stability and degradation.- State of the Art.- Silicon based heterojunction solar cells in China.

Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology

Автор: Ruud E.I. Schropp; Miro Zeman
Название: Amorphous and Microcrystalline Silicon Solar Cells: Modeling, Materials and Device Technology
ISBN: 1461375762 ISBN-13(EAN): 9781461375760
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien- tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon.

Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

Автор: Shibib Muhammed
Название: Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells
ISBN: 0530008130 ISBN-13(EAN): 9780530008134
Издательство: Неизвестно
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Цена: 17105.00 р.
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Описание: Abstract:

This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The study includes a comparison of theoretical predictions with a variety of experimental observations in heavily doped silicon and silicon devices.

A major conclusion is that the simplest physical model that adequately describes the heavily doped regions must include Fermi- Dirac statistics, a phenomenological excess intrinsic carrier density (or deficit impurity concentration), Auger recombination in the bulk, and recombination at the surface. These mechanisms are incorporated in a first-order model useful in the design of silicon pn-junction solar cells. The accuracy of the first-order model is supported by comparing its results with the results of more detailed models and of a numerical analysis of the problem. Experimental data are presented that are consistent with the predictions of the first-order model and of the numerical solution.

Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells" by Muhammed Ayman Shibib, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.

Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

Автор: Shibib Muhammed
Название: Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells
ISBN: 0530008122 ISBN-13(EAN): 9780530008127
Издательство: Неизвестно
Рейтинг:
Цена: 12139.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Abstract:

This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The study includes a comparison of theoretical predictions with a variety of experimental observations in heavily doped silicon and silicon devices.

A major conclusion is that the simplest physical model that adequately describes the heavily doped regions must include Fermi- Dirac statistics, a phenomenological excess intrinsic carrier density (or deficit impurity concentration), Auger recombination in the bulk, and recombination at the surface. These mechanisms are incorporated in a first-order model useful in the design of silicon pn-junction solar cells. The accuracy of the first-order model is supported by comparing its results with the results of more detailed models and of a numerical analysis of the problem. Experimental data are presented that are consistent with the predictions of the first-order model and of the numerical solution.

Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells" by Muhammed Ayman Shibib, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.

Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates

Автор: Li
Название: Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
ISBN: 1107408563 ISBN-13(EAN): 9781107408562
Издательство: Cambridge Academ
Цена: 4277.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


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