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Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors, Sourav Adhikary; Subhananda Chakrabarti


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Автор: Sourav Adhikary; Subhananda Chakrabarti
Название:  Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors
ISBN: 9789811353604
Издательство: Springer
Классификация:



ISBN-10: 9811353603
Обложка/Формат: Soft cover
Страницы: 63
Вес: 0.19 кг.
Дата издания: 2018
Язык: English
Издание: Softcover reprint of
Иллюстрации: 13 tables, color; 4 tables, black and white; 16 illustrations, color; 19 illustrations, black and white; xiii, 63 p. 35 illus., 16 illus. in color.
Размер: 236 x 226 x 5
Читательская аудитория: Professional & vocational
Основная тема: Engineering
Подзаголовок: From Materials to Devices
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and  responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
Дополнительное описание: Chapter 1: Introduction.- Chapter 2: Structural and Optical Characterization of Quaternary-Capped InAs/GaAs Quantum Dots.- Chapter 3: Effect of Rapid-Thermal Annealing on Quantum Dot Properties.- Chapter 4: In(Ga)As/GaAs Quantum Dot Infrared Photodetector



Quantum Well Infrared Photodetectors

Автор: Harald Schneider; Hui C. Liu
Название: Quantum Well Infrared Photodetectors
ISBN: 3642447805 ISBN-13(EAN): 9783642447808
Издательство: Springer
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Цена: 19589.00 р.
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Описание: Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs).

Infrared Photodetectors Based on Low-Dimensional Materials

Автор: Nan Guo
Название: Infrared Photodetectors Based on Low-Dimensional Materials
ISBN: 981134809X ISBN-13(EAN): 9789811348099
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.

Infrared Photodetectors Based on Low-Dimensional Materials

Автор: Nan Guo
Название: Infrared Photodetectors Based on Low-Dimensional Materials
ISBN: 9811328374 ISBN-13(EAN): 9789811328374
Издательство: Springer
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Цена: 18167.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.

Photodetectors

Автор: P.N.J. Dennis
Название: Photodetectors
ISBN: 1461292794 ISBN-13(EAN): 9781461292791
Издательство: Springer
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Цена: 15672.00 р.
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Описание: This book has been written as part of a new series of scientific text-books being published by Plenum Publishing Company Limited. The scope of the series is to review a chosen topic in each volume, and in addition, to present abstracts of the most important references cited in the text. Thus allowing the reader to supplement the information contained within this book without have to refer to many additional publications.

This volume is devoted to the subject of Radiation Detectors, known as Photodetectors, and particular emphasis has been placed on devices operating in the infrared region of the electromagnetic spectrum. Although some detectors which are sensitive at ultraviolet and visible wavelengths, are also described. The existence of the infrared region of the spectrum has been known for almost two hundred years but the development of detectors specifically for these wavelengths was limited for a long time due to technology limitations and difficulties in understanding and explaining the phenomena involved.

Significant advances were made during World War II, when the potential military applications of being able "to see in the dar~' were demonstrated, and this progress has been maintained during the last forty years when many major advances have been achieved, such that the use of photodetectors for both civil and military applications is now relatively common and can be inexpensive.

Photodetectors Handbook

Автор: Brown Kate
Название: Photodetectors Handbook
ISBN: 1632404079 ISBN-13(EAN): 9781632404077
Издательство: Неизвестно
Цена: 19304.00 р.
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Quaternary Alloys Based on II - VI Semiconductors

Автор: Tomashyk, Vasyl
Название: Quaternary Alloys Based on II - VI Semiconductors
ISBN: 0367378264 ISBN-13(EAN): 9780367378264
Издательство: Taylor&Francis
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Цена: 9798.00 р.
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Описание:

Doped by isovalent or heterovalent foreign impurities, II-VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths.



Quaternary Alloys Based on II-VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds. The book illustrates up-to-date experimental and theoretical information about phase relations based on II-VI semiconductor systems with four components. It critically evaluates many industrially significant systems presented in two-dimensional sections for the condensed phases.





The author classifies all materials according to the periodic groups of their constituent atoms and additional components in the order of their group number. Each quaternary database description contains brief information on the diagram type, possible phase transformations and physical-chemical interactions of the components, thermodynamic characteristics, and methods for equilibrium investigation and sample preparation. Most of the phase diagrams are in their original form. For those with varying published data, the text includes several versions for comparison.





This book provides invaluable data for technologists and researchers involved in developing and manufacturing II-VI semiconductors at industrial and national laboratories. It is also suitable for phase relations researchers, inorganic chemists, and semiconductor physicists as well as graduate students in materials science and engineering.





Check out the companion books: Ternary Alloys Based on II-VI Semiconductor Compounds and


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