Описание: This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.
Автор: Tomashyk, Vasyl Название: Multinary Alloys Based on II-VI Semiconductors ISBN: 036737742X ISBN-13(EAN): 9780367377427 Издательство: Taylor&Francis Рейтинг: Цена: 9798.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
A companion volume to Ternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2013) and Quaternary Alloys Based on II-VI Semiconductor Compounds (CRC Press, 2014), Multinary Alloys Based on II-VI Semiconductors provides up-to-date experimental and theoretical information on phase relations based on II-VI semiconductor systems with five or more components. Featuring detailed figures and extensive references, this book:
Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases
Summarizes the data from the last 15-20 years of literature on the study of organometallic compounds, which include zinc, cadmium, or mercury and sulfur, selenium, or tellurium
Classifies all materials according to the periodic table groups of their constituent atoms, that is, possible combinations of Zn, Cd, and Hg with chalcogens S, Se, and Te and additional components in the order of their group number
Specifies the diagram type, possible phase transformations and physical-chemical interaction of the components, methods of equilibrium investigation, thermodynamic characteristics, and methods for sample preparation in each multinary database description
Multinary Alloys Based on II-VI Semiconductors contains valuable material useful for obtaining nanoscale II-VI semiconductors and for preparing thin films of these semiconductor materials, as well as for exploring the biological and medicinal applications of organometallic compounds, and for identifying new compounds with necessary properties.
Описание: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III-V and II-VI semiconductor alloys used in various electronic and optoelectronic devices.
Автор: S. Luryi; B.I. Shklovskii; A.L. Efros Название: Electronic Properties of Doped Semiconductors ISBN: 3662024055 ISBN-13(EAN): 9783662024058 Издательство: Springer Рейтинг: Цена: 12577.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: First-generation semiconductors could not be properly termed "doped- they were simply very impure. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices.
Автор: Ren Fan, Pearton Stephen J. Название: Semiconductor-Based Sensors ISBN: 9813146729 ISBN-13(EAN): 9789813146723 Издательство: World Scientific Publishing Цена: 25344.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a comprehensive summary of the status of emerging sensor technologies and provides a framework for future advances in the field.
Автор: Pelant, Ivan; Valenta, Jan Название: Luminescence Spectroscopy of Semiconductors ISBN: 0199588333 ISBN-13(EAN): 9780199588336 Издательство: Oxford Academ Рейтинг: Цена: 21780.00 р. Наличие на складе: Поставка под заказ.
Описание: Semiconductor luminescence has been a rapidly expanding field over the last fifty years. Work on various types of luminescence radiation has been taking place but this is the first book that reviews the whole subject of semiconductor luminescence in one coherent volume.
Автор: Khler Anna Название: Electronic Processes in Organic Semiconductors ISBN: 3527332928 ISBN-13(EAN): 9783527332922 Издательство: Wiley Рейтинг: Цена: 10288.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The first advanced textbook to focus on the fundamentals in a brief, coherent and comprehensive way. Based on one of the author`s proven lecture course, it prepares students to understand the many multi-authored books available that discuss a particular aspect in more detail.
Автор: Baliga B Jayant Название: Gallium Nitride And Silicon Carbide Power Devices ISBN: 9813109408 ISBN-13(EAN): 9789813109407 Издательство: World Scientific Publishing Рейтинг: Цена: 16790.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."
IEEE Electrical Insulation Magazine
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Автор: Reinhard Krause-Rehberg; Hartmut S. Leipner Название: Positron Annihilation in Semiconductors ISBN: 3642084036 ISBN-13(EAN): 9783642084034 Издательство: Springer Рейтинг: Цена: 30039.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Описание: Devices based on disordered semiconductors have wide applications. This textbook connects characteristic features of the atomic and electronic structures of disordered semiconductors and the device design process on the basis of these materials.
Описание: The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE).
Автор: Pizzini, Sergio (university Of Milano-bicocca Milan Italy) Название: Point defects in group iv semiconductors ISBN: 1945291222 ISBN-13(EAN): 9781945291227 Издательство: Неизвестно Рейтинг: Цена: 17472.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
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