Описание: This up-to-date reference is the most comprehensive summary of the field of nanoscience and its applications. It begins with fundamental properties at the nanoscale and then goes well beyond into the practical aspects of the design, synthesis, and use of nanomaterials in various industries.
Автор: Kenji Uchino Название: MicroMechatronics, Second Edition ISBN: 036720231X ISBN-13(EAN): 9780367202316 Издательство: Taylor&Francis Рейтинг: Цена: 22202.00 р. Наличие на складе: Поставка под заказ.
Описание: Uchino presents in this updated Second Edition, a theoretical description of solid-state actuators, an overview of practical materials, device designs, drive/control techniques, and typical applications, as we consider current and future trends in the field of micromechatronics.
Автор: Ferry Название: An Introduction To Quantum Transpor ISBN: 9814745863 ISBN-13(EAN): 9789814745864 Издательство: Taylor&Francis Рейтинг: Цена: 14546.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics-semiconductors, with their variable densities and effective masses.
The author develops Green's functions starting from equilibrium Green's functions and going through modern time-dependent approaches to non-equilibrium Green's functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.
Автор: Susumu Watanabe Название: Microelectronics and Third-World Industries ISBN: 1349131245 ISBN-13(EAN): 9781349131242 Издательство: Springer Рейтинг: Цена: 7965.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Combining enterprise surveys in Brazil, India, Korea, Mexico, Malaysia and Singapore with national and international data including those from China and major machinery exporting countries, this book establishes the international pattern of diffusion of microelectronic industrial technologies.
Название: Microelectronics to Nanoelectronics ISBN: 1138072370 ISBN-13(EAN): 9781138072374 Издательство: Taylor&Francis Рейтинг: Цена: 12554.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Composed of contributions from top experts, Microelectronics to Nanoelectronics: Materials, Devices and Manufacturability offers a detailed overview of important recent scientific and technological developments in the rapidly evolving nanoelectronics arena. Under the editorial guidance and technical expertise of noted materials scientist Anupama B. Kaul of California Institute of Technology’s Jet Propulsion Lab, this book captures the ascent of microelectronics into the nanoscale realm. It addresses a wide variety of important scientific and technological issues in nanoelectronics research and development. The book also showcases some key application areas of micro-electro-mechanical-systems (MEMS) that have reached the commercial realm. Capitalizing on Dr. Kaul’s considerable technical experience with micro- and nanotechnologies and her extensive research in prestigious academic and industrial labs, the book offers a fresh perspective on application-driven research in micro- and nanoelectronics, including MEMS. Chapters explore how rapid developments in this area are transitioning from the lab to the market, where new and exciting materials, devices, and manufacturing technologies are revolutionizing the electronics industry. Although many micro- and nanotechnologies still face major scientific and technological challenges and remain within the realm of academic research labs, rapid advances in this area have led to the recent emergence of new applications and markets. This handbook encapsulates that exciting recent progress by providing high-quality content contributed by international experts from academia, leading industrial institutions—such as Hewlett-Packard—and government laboratories including the U.S. Department of Energy’s Sandia National Laboratory. Offering something for everyone, from students to scientists to entrepreneurs, this book showcases the broad spectrum of cutting-edge technologies that show significant promise for electronics and related applications in which nanotechnology plays a key role.
Автор: Pinaki Mazumder; Yalcin Yilmaz Название: Neuromorphic Circuits for Nanoscale Devices ISBN: 8770220603 ISBN-13(EAN): 9788770220606 Издательство: Taylor&Francis Рейтинг: Цена: 14851.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Nanoscale devices attracted significant research effort from the industry and academia due to their operation principals being based on different physical properties which provide advantages in the design of certain classes of circuits over conventional CMOS transistors.
Neuromorphic Circuits for Nanoscale Devices contains recent research papers presented in various international conferences and journals to provide insight into how the operational principles of the nanoscale devices can be utilized for the design of neuromorphic circuits for various applications of non-volatile memory, neural network training/learning, and image processing.
Table of Content:
Introduction; 1. Crossbar Memory Simulation and Performance Evaluation; 2. Memristor Digital Memory; 3. Multi-Level Memory Architecture; 4. Neuromorphic Building Blocks with Memristors; 5. Value Iteration with Memristors; 6. 2-D Array of Multi-Peak Resonant Tunneling Diodes Based Color Image Processing; 7. Color Image Processing with Multi-Peak Resonant Tunneling Diodes; 8. Design of a Velocity-Tuned Filter Using a Matrix of Resonant Tunneling Diodes; 9. Image Processing by a Programmable Artificial Retina Comprising Quantum Dots
Описание: Computational Electrodynamics is a vast research field with a wide variety of tools. In physics the principle of gauge invariance plays a pivotal role as a guide towards a sensible formulation of the laws of nature as well as computing the properties of elementary particles using the lattice formulation of gauge theories, yet the gauge principle has played a much less pronounced role in performing computation in classical electrodynamics. In this work the author will demonstrate that starting from the gauge formulation of electrodynamics using the electromagnetic potentials leads to computational tools that can very well compete with the conventional electromagnetic field-based tools. Once accepting the formulation based on gauge fields, the computational code is very transparent due to the mimetic mapping of the electrodynamic variables on the computational grid. Although the illustrations and applications originate from microelectronic engineering, the method has a much larger range of applicability. Therefore this book is of interest to everyone having interest in computational electrodynamics. The volume is organized as follows: In part 1, a detailed introduction and overview is presented of the Maxwell equations as well as the derivation of the current and charge densities is different materials. Semiconductors are responding to electromagnetic fields in a non-linear way and the induced complications are discussed in detail. In part 2, the transition of the theory of electrodynamics, using the gauge potentials, to a formulation that can serve as the gateway to computational code is presented. In part 3, the feasibility and success of the methods of part 2 are demonstrated by a collection of microelectronic device designs. Part 4 focuses on a set of topical themes that brings the reader to the frontier of research in building the simulation tools using the gauge principle in computational electrodynamics.Technical topics discussed in the book include:Electromagnetic Field EquationsConstitutive RelationsDiscretization and Numerical AnalysisFinite Element and Finite Volume MethodsDesign of Integrated Passive Components.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.
Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Автор: Yong Ping Xu Название: MEMS Silicon Oscillating Accelerometers and Readout Circuits ISBN: 877022045X ISBN-13(EAN): 9788770220453 Издательство: Taylor&Francis Рейтинг: Цена: 14086.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Most MEMS accelerometers on the market today are capacitive accelerometers that are based on the displacement sensing mechanism. This book is intended to cover recent developments of MEMS silicon oscillating accelerometers (SOA), also referred to as MEMS resonant accelerometer. As contrast to the capacitive accelerometer, the MEMS SOA is based on the force sensing mechanism, where the input acceleration is converted to a frequency output. MEMS Silicon Oscillating Accelerometers and Readout Circuits consists of six chapters and covers both MEMS sensor and readout circuit, and provides an in-depth coverage on the design and modelling of the MEMS SOA with several recently reported prototypes. The book is not only useful to researchers and engineers who are familiar with the topic, but also appeals to those who have general interests in MEMS inertial sensors. The book includes extensive references that provide further information on this topic.
Автор: Khanna, Vinod Kumar Название: Introductory Nanoelectronics ISBN: 0815384262 ISBN-13(EAN): 9780815384267 Издательство: Taylor&Francis Рейтинг: Цена: 19906.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This introductory text develops the reader`s fundamental understanding of core principles and experimental aspects underlying the operation of nanoelectronic devices. The author makes a thorough and systematic presentation of electron transport in quantum-confined systems.
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