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Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals, Velichko Oleg


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Автор: Velichko Oleg   (Олег Величко)
Название:  Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals
Перевод названия: Олег Величко: Сопряженная диффузия примесных атомов и точечных дефектов в кристаллах кремния
ISBN: 9781786347152
Издательство: World Scientific Publishing
Классификация:


ISBN-10: 1786347156
Обложка/Формат: Hardcover
Страницы: 404
Вес: 0.71 кг.
Дата издания: 18.11.2019
Серия: Physics
Язык: English
Размер: 229 x 152 x 24
Читательская аудитория: College/higher education
Ключевые слова: Semi-conductors & super-conductors, TECHNOLOGY & ENGINEERING / Electronics / Semiconductors,TECHNOLOGY & ENGINEERING / Electronics / Microelectronics,SCIENCE / Physics / Mathematical & Computational
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Поставляется из: Англии
Описание:

This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.

Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.




Optical Absorption of Impurities and Defects in Semiconducting Crystals

Автор: Bernard Pajot; Bernard Clerjaud
Название: Optical Absorption of Impurities and Defects in Semiconducting Crystals
ISBN: 3642430805 ISBN-13(EAN): 9783642430800
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.

Analysis and Control of Coupled Neural Networks with Reaction-Diffusion Terms

Автор: Jin-Liang Wang; Huai-Ning Wu; Tingwen Huang; Shun-
Название: Analysis and Control of Coupled Neural Networks with Reaction-Diffusion Terms
ISBN: 9811049068 ISBN-13(EAN): 9789811049064
Издательство: Springer
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Цена: 19564.00 р.
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Описание: This book introduces selected recent findings on the analysis and control of dynamical behaviors for coupled reaction-diffusion neural networks. It presents novel research ideas and essential definitions concerning coupled reaction-diffusion neural networks, such as passivity, adaptive coupling, spatial diffusion coupling, and the relationship between synchronization and output strict passivity. Further, it gathers research results previously published in many flagship journals, presenting them in a unified form. As such, the book will be of interest to all university researchers and graduate students in Engineering and Mathematics who wish to study the dynamical behaviors of coupled reaction-diffusion neural networks.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Автор: Peter Pichler
Название: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
ISBN: 3709172047 ISBN-13(EAN): 9783709172049
Издательство: Springer
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Цена: 41925.00 р.
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Описание: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon.

Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects

Автор: Tatsuya Kobayashi
Название: Study of Electronic Properties of 122 Iron Pnictide Through Structural, Carrier-Doping, and Impurity-Scattering Effects
ISBN: 9811044740 ISBN-13(EAN): 9789811044748
Издательство: Springer
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Цена: 15372.00 р.
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Описание: This thesis presents various characteristics of 122-type iron pnictide (FeSC) such as crystal and electronic structure, carrier-doping effect, and impurity-scattering effect, using transport, magnetization, specific heat, single-crystal X-ray diffraction, and optical spectral measurements.

Analysis and Control of Coupled Neural Networks with Reaction-Diffusion Terms

Автор: Jin-Liang Wang; Huai-Ning Wu; Tingwen Huang; Shun-
Название: Analysis and Control of Coupled Neural Networks with Reaction-Diffusion Terms
ISBN: 9811352623 ISBN-13(EAN): 9789811352621
Издательство: Springer
Рейтинг:
Цена: 19564.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book introduces selected recent findings on the analysis and control of dynamical behaviors for coupled reaction-diffusion neural networks. It presents novel research ideas and essential definitions concerning coupled reaction-diffusion neural networks, such as passivity, adaptive coupling, spatial diffusion coupling, and the relationship between synchronization and output strict passivity. Further, it gathers research results previously published in many flagship journals, presenting them in a unified form. As such, the book will be of interest to all university researchers and graduate students in Engineering and Mathematics who wish to study the dynamical behaviors of coupled reaction-diffusion neural networks.

Metal Impurities in Silicon-Device Fabrication

Автор: Klaus Graff
Название: Metal Impurities in Silicon-Device Fabrication
ISBN: 3642629652 ISBN-13(EAN): 9783642629655
Издательство: Springer
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Цена: 13060.00 р.
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Описание: This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. This new edition includes important recent data and many new tables.

Metal Impurities in Silicon- and Germanium-Based Technologies

Автор: Claeys
Название: Metal Impurities in Silicon- and Germanium-Based Technologies
ISBN: 3319939246 ISBN-13(EAN): 9783319939247
Издательство: Springer
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Цена: 23757.00 р.
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Описание: material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Capacitively-Coupled Chopper Amplifiers

Автор: Qinwen Fan; Kofi A. A. Makinwa; Johan H. Huijsing
Название: Capacitively-Coupled Chopper Amplifiers
ISBN: 3319473905 ISBN-13(EAN): 9783319473901
Издательство: Springer
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Цена: 12157.00 р.
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Описание: This book describes the concept and design of the capacitively-coupled chopper technique, which can be used in precision analog amplifiers. Readers will learn to design power-efficient amplifiers employing this technique, which can be powered by regular low supply voltage such as 2V and possibly having a +/-100V input common-mode voltage input. The authors provide both basic design concepts and detailed design examples, which cover the area of both operational and instrumentation amplifiers for multiple applications, particularly in power management and biomedical circuit designs.

Key Technologies of Magnetically-Coupled Resonant Wireless Power Transfer

Автор: Yiming Zhang
Название: Key Technologies of Magnetically-Coupled Resonant Wireless Power Transfer
ISBN: 9811065373 ISBN-13(EAN): 9789811065378
Издательство: Springer
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Цена: 13974.00 р.
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Описание: This thesis focuses on the key technologies involved in magnetically coupled Wireless Power Transfer (WPT). As such, the thesis offers readers a deeper understanding of WPT technology, while also proposing insightful new advances.

Key Technologies of Magnetically-Coupled Resonant Wireless Power Transfer

Автор: Yiming Zhang
Название: Key Technologies of Magnetically-Coupled Resonant Wireless Power Transfer
ISBN: 9811348987 ISBN-13(EAN): 9789811348983
Издательство: Springer
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Цена: 13974.00 р.
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Описание: This thesis focuses on the key technologies involved in magnetically coupled Wireless Power Transfer (WPT). Starting from the basic structures and theories of WPT, it addresses four fundamental aspects of these systems. Firstly, it analyzes the factors affecting transfer efficiency and compares various methods for reducing the working frequency. Secondly, it discusses frequency splitting and offers a physical explanation. Thirdly, it proposes and assesses three multiple-load transfer structures. Lastly, it investigates WPT systems with active voltage-source and current-source load. As such, the thesis offers readers a deeper understanding of WPT technology, while also proposing insightful new advances.

Coupled Data Communication Techniques for High-Performance and Low-Power Computing

Автор: Ron Ho; Robert Drost
Название: Coupled Data Communication Techniques for High-Performance and Low-Power Computing
ISBN: 1441965874 ISBN-13(EAN): 9781441965875
Издательство: Springer
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Цена: 23508.00 р.
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Описание: This overview of the circuits, architectures, and chip packaging for coupled data techniques discusses current research in chip-to-board capacitive coupling, chip-to-chip capacitive coupling, chip-to-chip inductive coupling, and chip-to-chip optical coupling.

Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides

Автор: Masaki Uchida
Название: Spectroscopic Study on Charge-Spin-Orbital Coupled Phenomena in Mott-Transition Oxides
ISBN: 4431561374 ISBN-13(EAN): 9784431561378
Издательство: Springer
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Цена: 13059.00 р.
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Описание: In this book, the author conducts extensive spectroscopy experiments beyond the bounds of each transition element to clarify origins of characteristic spectral features and charge dynamics in charge-spin-orbital coupled phenomena in Mott-transition oxides.


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