Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon, Peter Pichler
Автор: Klaus Graff Название: Metal Impurities in Silicon-Device Fabrication ISBN: 3642629652 ISBN-13(EAN): 9783642629655 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This up-to-date monograph provides a thorough review of the relevant data and properties of the transition-metal impurities generated during silicon-sample and device fabrication. This new edition includes important recent data and many new tables.
Автор: Henning Pr?ser Название: Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities ISBN: 3319063847 ISBN-13(EAN): 9783319063843 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Magnetic impurities in a non-magnetic host metal have been actively explored in condensed matter physics in recent last decades. This thesis contains a comprehensive description of the STM /STS technique, sub-surface impurities, as well as single- and two-impurity Kondo physics - and as such offers a valuable introduction to newcomers to the field.
Описание: Semiconducting and Insulating Crystals details how absorption spectroscopy provides information on the nature, concentration, charge state and configuration of impurities in crystals, and also on their kinetics and transformations under annealing.
Описание: This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.
Автор: Henning Pr?ser Название: Scanning Tunneling Spectroscopy of Magnetic Bulk Impurities ISBN: 3319360515 ISBN-13(EAN): 9783319360515 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Magnetic impurities in a non-magnetic host metal have been actively explored in condensed matter physics in recent last decades. This thesis contains a comprehensive description of the STM /STS technique, sub-surface impurities, as well as single- and two-impurity Kondo physics - and as such offers a valuable introduction to newcomers to the field.
Автор: Olof Holtz; Qing Xiang Zhao Название: Impurities Confined in Quantum Structures ISBN: 3642622283 ISBN-13(EAN): 9783642622281 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The dramatic impact of low dimensional semiconductor structures on c- rent and future device applications cannot be overstated. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, which di?er from those of constituent bulk materials.
Автор: Michael Steger Название: Transition-Metal Defects in Silicon ISBN: 3642438083 ISBN-13(EAN): 9783642438080 Издательство: Springer Рейтинг: Цена: 13059.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.
Автор: Steger, Michael Название: Transition-metal defects in silicon ISBN: 364235078X ISBN-13(EAN): 9783642350788 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.
Автор: Giorgio Benedek Название: Point and Extended Defects in Semiconductors ISBN: 146845711X ISBN-13(EAN): 9781468457117 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The systematic study of defects in semiconductors began in the early fifties. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Автор: James H. Crawford; Lawrence M. Slifkin Название: Point Defects in Solids ISBN: 1468429728 ISBN-13(EAN): 9781468429725 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Crystal defects can no longer be thought of as a scientific curiosity, but must be considered an important aspect of solid-state science. Thus, there are few compre- hensive, tutorial sources for the scientist or engineer whose research ac- tivities are affected by point defect phenomena, or who might wish to enter the field.
Автор: B. Henderson Название: Defects and Their Structure in Nonmetallic Solids ISBN: 1468428047 ISBN-13(EAN): 9781468428049 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Thus major emphases in the pro- gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3642627226 ISBN-13(EAN): 9783642627224 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
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