Point and Extended Defects in Semiconductors, Giorgio Benedek

Автор: Holt
Название: Extended Defects in Semiconductors
ISBN: 1107424143 ISBN-13(EAN): 9781107424142
Издательство: Cambridge Academ
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Описание: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Автор: J. Friedel; M. Lannoo
Название: Point Defects in Semiconductors I
ISBN: 3642815766 ISBN-13(EAN): 9783642815768
Издательство: Springer
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Описание: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of `band theory` can be safely used to study its interesting electronic properties.

Автор: J. Bourgoin
Название: Point Defects in Semiconductors II
ISBN: 364281834X ISBN-13(EAN): 9783642818349
Издательство: Springer
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Описание: In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place.

Автор: J. Chikawa; K. Sumino; K. Wada
Название: Defects and Properties of Semiconductors
ISBN: 9401086168 ISBN-13(EAN): 9789401086165
Издательство: Springer
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Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.

Автор: James H. Crawford; Lawrence M. Slifkin
Название: Point Defects in Solids
ISBN: 1468429728 ISBN-13(EAN): 9781468429725
Издательство: Springer
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Описание: Crystal defects can no longer be thought of as a scientific curiosity, but must be considered an important aspect of solid-state science. Thus, there are few compre- hensive, tutorial sources for the scientist or engineer whose research ac- tivities are affected by point defect phenomena, or who might wish to enter the field.

Автор: Gunnar Borstel; Andris Krumins; Donats Millers
Название: Defects and Surface-Induced Effects in Advanced Perovskites
ISBN: 0792362179 ISBN-13(EAN): 9780792362173
Издательство: Springer
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Описание: Complex oxide materials, especially the ABO3-type perovskite materials, have been attracting growing scientific interest due to their unique electro-optical properties. This work presents 51 papers that report the developments and new results and can stimulate progress in high-tech technologies using perovskite materials.

Автор: Peter Pichler
Название: Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
ISBN: 3709172047 ISBN-13(EAN): 9783709172049
Издательство: Springer
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Описание: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon.

Автор: Steger, Michael
Название: Transition-metal defects in silicon
ISBN: 364235078X ISBN-13(EAN): 9783642350788
Издательство: Springer
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Описание: This book demonstrates the power of isotopic enrichment for high-resolution spectroscopic characterization. It records properties of transition metal centers in silicon with unprecedented accuracy.